Broadband Nonlinear Optical Absorption Induced by Bandgap Renormalization in CVD-Grown Monolayer MoSe₂

Xiangling Tian; Rongfei Wei; Zhijun Ma; Jianrong Qiu

doi:10.1021/acsami.1c23053

journal article·2022-02-16

Broadband Nonlinear Optical Absorption Induced by Bandgap Renormalization in CVD-Grown Monolayer MoSe₂

Xiangling Tian, Rongfei Wei, Zhijun Ma, Jianrong Qiu

ACS Applied Materials & Interfaces· Volume 14· Issue 6

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Source abstract

Abstract

Optical modulation on ultrashort time scales is both of central importance and an essential operation for applications in photonics and optoelectronics. Here, with a giant bandgap renormalization due to a high density of carrier injected by a femtosecond pulse, we realize an expected broadband saturable absorption in chemical vapor deposition grown monolayer transition-metal dichalcogenide MoSe2. Our findings reveal the band edge shift from ∼1.53 to ∼0.52 eV under the pump excitation of 0.80 eV, which is induced by the nonequilibrium occupation of electron–hole states after a Mott transition as well as the increase of carrier temperature.

Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials Materials processing

OpenAlex topics: Advanced Fiber Laser Technologies · Laser-Matter Interactions and Applications · Photonic and Optical Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Zhejiang Laboratory, Hangzhou 311100, P.R. China

Department of Physics, Zhejiang Normal University, Jinhua, Zhejiang 321004, P.R. China

State Key Laboratory of Modern Optical Instrumentation, College of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, P.R. China

Funding

National Natural Science Foundation of China · Natural Science Foundation of Zhejiang Province

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