Turning Low-Nanoscale Intrinsic Silicon Highly Electron-Conductive by SiO2 Coating
Source abstract
Abstract
-coated Si nanowells shift by up to 0.2 eV below the conduction band and ca. 0.7 eV below the valence band edge of bulk silicon, respectively. This nanoscale electronic structure shift induced by anions at surfaces (NESSIAS) provides the means for low-nanoscale intrinsic Si (i-Si) to be flooded by electrons from an external (bigger, metallic) reservoir, thereby getting highly electron- (n-) conductive. While our findings deviate from the behavior commonly believed to govern the properties of silicon nanowells, they are further confirmed by the fundamental energy gap as per nanowell thickness when compared against published experimental data. Supporting our findings further with hybrid density functional theory calculations, we show that other group IV semiconductors (diamond, Ge) do respond to the NESSIAS effect in accord with Si. We predict adequate nanowire cross-sections (X-sections) from experimental nanowell data with a recently established crystallographic analysis, paving the way to undoped ultrasmall silicon electronic devices with significantly reduced gate lengths, using complementary metal-oxide-semiconductor-compatible materials.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Nanowire Synthesis and Applications · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Integrated Materials Design Laboratory (IMDL), The Australian National University, Canberra, Australian Capital Territory 2601, Australia
Smart Materials and Surface Group, University of New South Wales, Sydney, New South Wales 2052, Australia
Institute of Semiconductor Electronics (IHT), RWTH Aachen University, Aachen 52074, Germany
Laboratorio TASC, IOM-CNR, Area Science Park S.S. 14 km 163.5, Trieste 34149, Italy
Central Facility for Electron Microscopy, RWTH Aachen University, Aachen 52074, Germany
Ametek GmbH, BU Gatan, Ingolstädter Straße 12, Munich 80807, Germany
Elettra Sincrotrone Trieste, Strada Statale 14 km 163.5, Trieste 34149, Italy
Department of Applied Mathematics, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
Funding
Deutscher Akademischer Austauschdienst · Ministero dell???Istruzione, dell???Universit?? e della Ricerca · RWTH Aachen University · Helmholtz Association · German Research Foundation
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