Interband Transitions in Monolayer and Few-Layer WSe2 Probed Using Photoexcited Charge Collection Spectroscopy
Source abstract
Abstract
Transition-metal dichalcogenides are currently under rigorous investigation because of their distinct layer-dependent physical properties originating from the corresponding evolution of the band structure. Here, we report the highly resolved probing of layer-dependent band structure evolution for WSe2 using photoexcited charge collection spectroscopy (PECCS). Monolayer, few-layer, and multilayer WSe2 can be probed in top-gate field-effect transistor platforms, and their interband transitions are efficiently observed. Our theoretical calculations show a great coincidence with the PECCS results, proving that the indirect Γ–K and Γ–Λ transitions as well as the direct K–K transition are clearly resolved in multilayer WSe2 by PECCS.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · MXene and MAX Phase Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Reality Display Device Research Group, Electronics and Telecommunications Research Institute, 218 Gajeong-ro, Yuseong-gu, Daejeon 34129, Republic of Korea
Department of Physics, Kunsan National University, Gunsan 54150, Republic of Korea
Department of Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
Funding
National Research Foundation of Korea
References (30)
Show source-provided references
1. 10.1038/nnano.2006.14210.1038/nnano.2006.142 ↗
2. 10.1038/nnano.2010.8910.1038/nnano.2010.89 ↗
3. 10.1021/acsnano.5b0504010.1021/acsnano.5b05040 ↗
4. 10.1021/acs.chemrev.6b0055810.1021/acs.chemrev.6b00558 ↗
5. 10.1021/nl301485q10.1021/nl301485q ↗
6. 10.1021/nn202455710.1021/nn2024557 ↗
7. 10.1021/nn502717d10.1021/nn502717d ↗
8. 10.1021/ar400231210.1021/ar4002312 ↗
9. 10.1103/PhysRevB.85.03330510.1103/PhysRevB.85.033305 ↗
10. 10.1103/PhysRevB.91.04140710.1103/PhysRevB.91.041407 ↗
11. 10.1103/PhysRevB.87.16540910.1103/PhysRevB.87.165409 ↗
12. 10.1002/smll.20120291910.1002/smll.201202919 ↗
13. 10.1021/nn305275h10.1021/nn305275h ↗
14. 10.1021/nl403270k10.1021/nl403270k ↗
15. 10.1002/adfm.20150200810.1002/adfm.201502008 ↗
16. 10.1002/adfm.20160029210.1002/adfm.201600292 ↗
17. 10.1021/nn503521c10.1021/nn503521c ↗
18. 10.1038/nnano.2014.1410.1038/nnano.2014.14 ↗
19. 10.1039/C6RA17643G10.1039/C6RA17643G ↗
20. Mark F. · 2001
21. 10.1039/C4NR06707J10.1039/C4NR06707J ↗
22. 10.1103/PhysRevB.55.1040010.1103/PhysRevB.55.10400 ↗
23. 10.1103/PhysRevLett.77.386510.1103/PhysRevLett.77.3865 ↗
24. 10.1103/PhysRevB.43.199310.1103/PhysRevB.43.1993 ↗
25. 10.1088/0953-8984/14/11/30210.1088/0953-8984/14/11/302 ↗
26. 10.1103/PhysRevB.21.263010.1103/PhysRevB.21.2630 ↗
27. 10.1103/PhysRevB.64.07310610.1103/PhysRevB.64.073106 ↗
28. 10.1103/PhysRevLett.48.142510.1103/PhysRevLett.48.1425 ↗
29. Muller R. S. · 2003
30. 10.1021/nn402954e10.1021/nn402954e ↗