journal article·2019-08-21

Residual Strain-Mediated Multiferroic Properties of Ba0.85Ca0.15Zr0.9Ti0.1O3/La0.67Ca0.33MnO3 Epitaxial Heterostructures

Songbin Li, Chuanbin Wang, Qiang Shen, Lianmeng Zhang

ACS Applied Materials & Interfaces· Volume 11· Issue 33
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Abstract

In this study, artificial multiferroic Ba0.85Ca0.15Zr0.1Ti0.9O3/La0.67Ca0.33MnO3(BCZT/LCMO) epitaxial heterostructures were deposited on Nb-doped SrTiO3 substrates using pulsed laser deposition. The epitaxial growth of the heterostructures on the substrate was demonstrated by XRD, RSM, and TEM analyses, which displayed decreasing residual strain with increasing BCZT layer thickness. The electrical, magnetic, and magnetoelectric properties of the epitaxial heterostructures were investigated in detail, and they were sensitive to the varying BCZT layer thickness in terms of residual strain. The multiferroic nature of the heterostructures was demonstrated by ferroelectric and ferromagnetic hysteresis loops. Strain-mediated magnetoelectric behavior was observed in the epitaxial heterostructures. Finally, dielectric properties were enhanced in the heterostructures over the BCZT single layer film, and the maximum magnetoelectric coefficient of the heterostructures was 206.5 mV/cm·Oe.
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Research context

OpenAlex topics: Multiferroics and related materials · Ferroelectric and Piezoelectric Materials · Magnetic and transport properties of perovskites and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, P. R. China

Funding

Ministry of Education of the People's Republic of China · Natural Science Foundation of Hubei Province · National Natural Science Foundation of China · Hubei Province

References (37)

Show source-provided references
1. 10.1002/adma.20100363610.1002/adma.201003636 ↗
2. 10.1038/nmat180510.1038/nmat1805 ↗
3. 10.1021/acsami.5b1023310.1021/acsami.5b10233 ↗
4. 10.1002/chin.20060222310.1002/chin.200602223 ↗
5. 10.1063/1.179536510.1063/1.1795365 ↗
6. 10.1111/j.1551-2916.2008.02259.x10.1111/j.1551-2916.2008.02259.x ↗
7. 10.1063/1.500860410.1063/1.5008604 ↗
8. 10.1103/PhysRevB.79.18040610.1103/PhysRevB.79.180406 ↗
9. 10.1038/nmat330610.1038/nmat3306 ↗
10. 10.1103/PhysRevLett.104.12720210.1103/PhysRevLett.104.127202 ↗
11. 10.1038/nnano.2007.41210.1038/nnano.2007.412 ↗
12. 10.1016/j.actamat.2005.10.02010.1016/j.actamat.2005.10.020 ↗
13. 10.1103/PhysRevLett.103.25760210.1103/PhysRevLett.103.257602 ↗
14. 10.1016/j.scriptamat.2017.09.04410.1016/j.scriptamat.2017.09.044 ↗
15. 10.1103/PhysRevB.75.17240610.1103/PhysRevB.75.172406 ↗
16. 10.1021/acsami.5b0894310.1021/acsami.5b08943 ↗
17. 10.1063/1.482191810.1063/1.4821918 ↗
18. 10.1111/jace.1356010.1111/jace.13560 ↗
19. 10.1111/jace.1598310.1111/jace.15983 ↗
20. 10.1063/1.242277810.1063/1.2422778 ↗
21. 10.1038/s41598-018-20149-y10.1038/s41598-018-20149-y ↗
22. 10.1016/j.scriptamat.2008.06.04510.1016/j.scriptamat.2008.06.045 ↗
23. 10.1063/1.271511010.1063/1.2715110 ↗
24. 10.1063/1.233700910.1063/1.2337009 ↗
25. 10.1063/1.490640710.1063/1.4906407 ↗
26. 10.1016/j.jallcom.2014.01.02110.1016/j.jallcom.2014.01.021 ↗
27. 10.1016/j.jallcom.2013.11.02610.1016/j.jallcom.2013.11.026 ↗
28. Rivas J. · Appl. Phys. Lett. · 2006 · 88 · 5510.1063/1.2213513 ↗
29. 10.1016/S0370-1573(00)00121-610.1016/S0370-1573(00)00121-6 ↗
30. 10.1021/am509055f10.1021/am509055f ↗
31. 10.1063/1.294001410.1063/1.2940014 ↗
32. 10.3390/ma901004410.3390/ma9010044 ↗
33. 10.1088/1361-6463/aab8c910.1088/1361-6463/aab8c9 ↗
34. 10.1063/1.491344410.1063/1.4913444 ↗
35. 10.1039/c3tc32105c10.1039/c3tc32105c ↗
36. 10.1021/acs.cgd.8b0070210.1021/acs.cgd.8b00702 ↗
37. 10.1016/j.jallcom.2018.05.12710.1016/j.jallcom.2018.05.127 ↗