journal article·2013-06-12

Oriented Film Growth of Ba1–xSrxTiO3 Dielectrics on Glass Substrates Using 2D Nanosheet Seed Layer

Chulho Jung, Tsuyoshi Ohnishi, Minoru Osada, Kazunori Takada, Takayoshi Sasaki

Publisher page

Abstract

An approach to fabricate Ba0.5Sr0.5TiO3 (BST) films with a preferred orientation on a glass substrate by pulsed laser deposition was developed. To ensure a preferred crystallographic orientation, we utilized a molecularly thin Ca2Nb3O10 perovskite nanosheet as a seed layer and successfully fabricated BST films with a nearly perfect (100)-axis orientation. The 100 nm films after annealing at 450 °C in air showed a good dielectric performance (ε(r) > 400), which was comparable to the ε(r) value of epitaxially grown films with the same thickness. These results indicate that the nanosheet seed layer plays a crucial role in controlled film growth, realizing a nearly intrinsic performance of BST.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Ferroelectric and Piezoelectric Materials · Electronic and Structural Properties of Oxides · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

International Center for Materials Nanoarchitectonics (MANA), Global Research Center for Environment and Energy Based on Nanomaterials Science (GREEN), and Environmental and Energy Materials Division, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

References (30)

Show source-provided references
1. Schlom D. G. · J. Am. Ceram. Soc. · 2008 · 91 · 242910.1111/j.1551-2916.2008.02556.x ↗
2. Lee H. N. · Science · 2002 · 296 · 200610.1126/science.1069958 ↗
3. Watanabe T. · Appl. Phys. Lett. · 2002 · 81 · 166010.1063/1.1503850 ↗
4. Watanabe T. · J. Appl. Phys. · 2006 · 100 · 05160210.1063/1.2337357 ↗
5. Vrejoiu I. · Adv. Funct. Mater. · 2008 · 18 · 389210.1002/adfm.200800560 ↗
6. Chang W. · J. Appl. Phys. · 2000 · 87 · 304410.1063/1.372297 ↗
7. Carlson C. M. · Appl. Phys. Lett. · 2000 · 76 · 192010.1063/1.126212 ↗
8. Moon S. E. · Appl. Phys. Lett. · 2003 · 83 · 216610.1063/1.1609658 ↗
9. Chang K. S. · Appl. Phys. Lett. · 2001 · 79 · 441110.1063/1.1427438 ↗
10. Sasaki T. · J. Am. Chem. Soc. · 1998 · 120 · 468210.1021/ja974262l ↗
11. Ma R. · Adv. Mater. · 2010 · 22 · 508210.1002/adma.201001722 ↗
12. Shibata T. · Adv. Mater. · 2008 · 20 · 23110.1002/adma.200701381 ↗
13. Shibata T. · J. Phys. Chem. C · 2009 · 113 · 1909610.1021/jp9074288 ↗
14. Shibata T. · Cryst. Growth Des. · 2010 · 10 · 378710.1021/cg1006204 ↗
15. McQuarrie M. · J. Am. Ceram. Soc. · 1955 · 38 · 44410.1111/j.1151-2916.1955.tb14571.x ↗
16. Ebina Y. · Solid State Ionics · 2002 · 151 · 17710.1016/S0167-2738(02)00707-5 ↗
17. Akatsuka K. · ACS Nano · 2009 · 3 · 109710.1021/nn900104u ↗
18. Osada M. · ACS Nano · 2010 · 4 · 522510.1021/nn101453v ↗
19. Ohnishi T. · Appl. Phys. Lett. · 2005 · 87 · 24191910.1063/1.2146069 ↗
20. Ohnishi T. · J. Appl. Phys. · 2008 · 103 · 10370310.1063/1.2921972 ↗
21. Alldredge L. M. B. · Appl. Phys. Lett. · 2007 · 90 · 21290110.1063/1.2741610 ↗
22. Stengel M. · Nature · 2006 · 443 · 67910.1038/nature05148 ↗
23. Lee C. · Phys. Rev. B · 1975 · 11 · 229910.1103/PhysRevB.11.2299 ↗
24. Song S. N. · J. Appl. Phys. · 2008 · 104 · 09610710.1063/1.3009957 ↗
25. Zhu X. H. · J. Appl. Phys. · 2009 · 106 · 02410910.1063/1.3186019 ↗
26. Gevorgian S. S. · IEEE Trans. Microwave Theory Tech. · 1996 · 44 · 89610.1109/22.506449 ↗
27. Kim W. J. · Appl. Phys. Lett. · 2000 · 76 · 118510.1063/1.125977 ↗
28. Basceri C. · J. Appl. Phys. · 1997 · 82 · 249710.1063/1.366062 ↗
29. Kim T. S. · J. Appl. Phys. · 1994 · 75 · 799810.1063/1.356537 ↗
30. Zhou X. Y. · Appl. Phys. Lett. · 2007 · 90 · 13290210.1063/1.2716865 ↗