Self-Organized Ferroelectric Domains Controlled by a Constant Bias from the Atomic Force Microscopy Tip
Source abstract
Abstract
The ferroelectric polarization switching along an external electric field is most important for the applications of ferroelectric memories and piezoelectric sensors and actuators; however, the depolarization commonly occurs randomly and cannot be controlled exactly until now. Here, a tip bias introduces the polarization switching and a ∼10 μm-scale domain in a triglycine sulfate crystal, and then the polarization backswitching as a special depolarization introduces a series of ordered granular domains along a line being parallel to the c axis and through the tip which divides the original domain to two similar parts. Such backswitching is controlled by the surface charge change as a result of the interplay among polarization charges, mobile H+ ions at the surface, and the strong crystal anisotropy. The self-organized ferroelectric domains offer us a new freedom to design novel ferroelectric or piezoelectric devices in future.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Acoustic Wave Resonator Technologies · Multiferroics and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, P. R. China
School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales 2052, Australia
National Laboratory of Solid State Microstructures Nanjing University, Nanjing 210093, P. R. China
Funding
Ministry of Education of the People's Republic of China · Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China
References (35)
Show source-provided references
1. 10.1126/science.112956410.1126/science.1129564 ↗
2. 10.1038/nmat213710.1038/nmat2137 ↗
3. 10.1021/nn303090k10.1021/nn303090k ↗
4. 10.1088/0960-1317/10/2/30710.1088/0960-1317/10/2/307 ↗
5. 10.1038/nnano.2010.4610.1038/nnano.2010.46 ↗
6. 10.1126/science.120718610.1126/science.1207186 ↗
7. 10.1063/1.144865310.1063/1.1448653 ↗
8. 10.1038/ncomms160010.1038/ncomms1600 ↗
9. 10.1021/nl404734z10.1021/nl404734z ↗
10. 10.1038/nnano.2014.32010.1038/nnano.2014.320 ↗
11. 10.1038/nmat487810.1038/nmat4878 ↗
12. 10.1134/s106378341503019110.1134/s1063783415030191 ↗
13. 10.1038/nmat479910.1038/nmat4799 ↗
14. 10.1038/s41535-017-0047-210.1038/s41535-017-0047-2 ↗
15. 10.1038/npjquantmats.2016.1510.1038/npjquantmats.2016.15 ↗
16. 10.1021/acsami.8b0951310.1021/acsami.8b09513 ↗
17. 10.1021/acsami.7b0892510.1021/acsami.7b08925 ↗
18. 10.1038/ncomms836110.1038/ncomms8361 ↗
19. 10.1038/ncomms554510.1038/ncomms5545 ↗
20. 10.1038/nmat324910.1038/nmat3249 ↗
21. 10.1103/physrevlett.98.24760310.1103/physrevlett.98.247603 ↗
22. 10.1038/nphys279610.1038/nphys2796 ↗
23. 10.1002/adma.20130400210.1002/adma.201304002 ↗
24. 10.1002/aelm.20160003810.1002/aelm.201600038 ↗
25. 10.1080/00150193.2011.55426910.1080/00150193.2011.554269 ↗
26. 10.1103/physrev.107.125510.1103/physrev.107.1255 ↗
27. 10.1088/0957-4484/18/9/09550210.1088/0957-4484/18/9/095502 ↗
28. 10.1103/physrevb.72.21412010.1103/physrevb.72.214120 ↗
29. 10.1016/j.physb.2005.12.24510.1016/j.physb.2005.12.245 ↗
30. 10.1016/j.elstat.2004.12.00610.1016/j.elstat.2004.12.006 ↗
31. 10.1007/s10853-005-6065-710.1007/s10853-005-6065-7 ↗
32. 10.1063/1.502356410.1063/1.5023564 ↗
33. 10.1039/c6nr01524g10.1039/c6nr01524g ↗
34. 10.1103/physrevb.95.19541310.1103/physrevb.95.195413 ↗
35. 10.1021/nn506268g10.1021/nn506268g ↗