journal article·2020-05-20

Grain Boundary Induced Ultralow Threshold Random Laser in a Single GaTe Flake

Zuxin Chen, Yingjun Zhang, Sheng Chu, Rong Sun, Jun Wang, Jiapeng Chen, Bin Wei, Xin Zhang, Weihang Zhou, Yumeng Shi, Zhongchang Wang

ACS Applied Materials & Interfaces· Volume 12· Issue 20
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Abstract

Random lasing is a lasing phenomenon realized in random media, and it has attracted a great deal of attention in recent years. An essential requirement for strong random lasing is to achieve strong and recurrent scattering among grain boundaries of a disordered structure. Herein, we report a random laser (RL) based on individual polycrystalline GaTe microflakes (MFs) with a lasing threshold of 4.15 kW cm–2, about 1–2 orders of magnitude lower than that of the reported single GaN microwire random laser. The strongly enhanced light scattering and trapping benefit from the reduced grain size in the polycrystalline GaTe MF, resulting in a ultralow threshold. We also investigate the dependence of spatially localized cavities’ dimension on the pumping intensity profile and temperature. The findings provide a feasible route to realize RL with a low threshold and small size, opening up a new avenue in fulfilling many potential optoelectronic applications of RL.
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Research context

OpenAlex topics: Random lasers and scattering media · Terahertz technology and applications · Spectroscopy and Laser Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China

International Iberian Nanotechnology Laboratory (INL), Av. Mestre Jose Veiga s/n, 4715-330 Braga, Portugal

Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science & Technology, Wuhan 430074, China

State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou, 510275, China

School of Materials and Energy, Southwest University, Chongqing 400715, China

Funding

China Postdoctoral Science Foundation · Department of Education of Guangdong Province · National Natural Science Foundation of China · Science and Technology Project of Shenzhen · Science, Technology and Innovation Commission of Shenzhen Municipality · Central People's Government of the People's Republic of China

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