DataVXACS Applied Materials & InterfacesPaper
journal article·2017-04-12

Ultrathin (Bi1–xSbx)2Se3 Field Effect Transistor with Large ON/OFF Ratio

Yu-Hung Liu, Cheong-Wei Chong, Chun-Ming FanChiang, Jung-Chun-Andrew Huang, Hsieh-Cheng Han, Zhongjun Li, Huaili Qiu, Yi-Chang Li, Chuan-Pu Liu

ACS Applied Materials & Interfaces· Volume 9· Issue 14
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Source abstract

Abstract

Ultrathin three-dimensional topological insulator films are promising for use in field effect devices. (Bi 1– x Sb x ) 2 Se 3 ultrathin films were fabricated on SrTiO 3 substrate, where large resistance changes of ∼25 000% could be achieved using the back gate voltage. We suggest that the large ON/OFF ratio was caused by the combined effect of Sb-doping and the reduction of film thickness down to the ultrathin regime. The crossover of different quantum transport under an electric field may form the basis for topological insulators (TI)-based spin transistors with large ON/OFF ratios in the future.
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Research context

Electronic materials

OpenAlex topics: Topological Materials and Phenomena · Electronic and Structural Properties of Oxides · Quantum and electron transport phenomena

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Taiwan Consortium of Emergent Crystalline Materials (TCECM), Ministry of Science and Technology, Taipei 10622, Taiwan

Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan

School of Electronic Science and Applied Physics, HeFei University of Technology, Hefei, Anhui 230009, China

Funding

Ministry of Science and Technology, Taiwan

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