DataVXACS Applied Materials & InterfacesPaper
journal article·2017-02-15

Effect of Extrinsically Introduced Passive Interface Layer on the Performance of Ferroelectric Tunnel Junctions

Rui Guo, Ying Wang, Herng Yau Yoong, Jianwei Chai, Han Wang, Weinan Lin, Shaohai Chen, Xiaobing Yan, Thirumalai Venkatesan, Ariando, Alexei Gruverman, Yihong Wu, Jingsheng Chen

ACS Applied Materials & Interfaces· Volume 9· Issue 6
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Source abstract

Abstract

We report the effect of the top electrode/functional layer interface on the performance of ferroelectric tunnel junctions. Ex situ and in situ fabrication process were used to fabricate the top Pt electrode. With the ex situ fabrication process, one passive layer at the top interface would be induced. Our experimental results show that the passive interface layer of the ex situ devices increases the coercive voltage of the functional BaTiO 3 layer and decreases the tunneling current magnitude. However, the ex situ tunneling devices possess more than 1000 times larger ON/OFF ratios than that of the in situ devices with the same size of top electrode.
Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: Ferroelectric and Piezoelectric Materials · Advanced Memory and Neural Computing · Electronic and Structural Properties of Oxides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering, National University of Singapore, 117575 Singapore

NUSNNI-Nanocore, National University of Singapore, 117411 Singapore

Department of Electrical and Computer Engineering, National University of Singapore, 117583 Singapore

Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way #08-01 Innovis, 138634 Singapore

Department of Physics, National University of Singapore, 117542 Singapore

NUS Graduate School for Integrative Science and Engineering, National University of Singapore, 117576 Singapore

Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588-0299, United States

Funding

Ministry of Education - Singapore · National Research Foundation Singapore

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