Solvent-Assisted Thermal-Pressure Strategy for Constructing High-Quality CH₃NH₃PbI_3–xCl_x Films as High-Performance Perovskite Photodetectors

High-quality CH3NH3PbI3–xClx films have attracted research interests in photoelectric devices because of their improved carrier diffusion length and charge mobility. Herein, a solvent-assisted thermal-pressure strategy is developed to promote the secondary growth of perovskite grains in the films. Highly oriented perovskite films are then obtained with large-sized grains (5–10 μm). As a consequence, the photodetectors based on the high-quality CH3NH3PbI3–xClx films exhibit enhanced ophtoelectrical performance, including high on/off ratio (>2.1 × 104), fast response time (54/63 μs), and high detectivity (∼1.3 × 1012). This work suggests an effective approach for high-quality perovskite films, which will be promising candidates for other high-efficiency photoelectric devices.