Enhancing the Optoelectronic Performance of MoSe 2 Nanosheets/Si Heterojunctions with Graphene Electrodes
Source abstract
Abstract
%. The device demonstrates broadband photodetection capability across the visible to near-infrared spectrum, featuring the fastest measured rise and fall times of 810 and 950 μs at 700 nm wavelength. Furthermore, temperature-dependent measurements reveal a significant impact on optoelectronic properties: At low temperatures, the photoresponse performance deteriorates due to the reduction of the effective barrier height within the device.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Graphene research and applications · Photonic and Optical Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
College of Physics
Hebei Normal University
Hebei Advanced Thin Film Laboratory
Hebei Key Laboratory of Photophysics Research and Application
Funding
Natural Science Foundation of Hebei Province · Hebei Provincial Department of Science and Technology
References (49)
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