DataVXACS Applied Materials & InterfacesPaper
journal article·2025-07-23

Nanocolumn Floating Gates Induced by the Supramolecular Blending Strategy for Highly Improved Charge Trapping Capacity

Mingjian Ni, Jing Liu, Liangliang He, Jing Hua, Lili Sun, Man Xu, Jinyi Lin, Haifeng Ling, Yuyu Liu, Guohua Xie, Wei Huang

ACS Applied Materials & Interfaces
Publisher page
Source abstract

Abstract

Nonvolatile organic field-effect transistor (OFET) memory devices have attracted extensive attention due to their advantages such as lightweightedness and nonvolatile readout. With the increasing demand for storage capacity and efficiency, it is extremely important to design high-capacity and stable OFET memory devices. Here, we propose a universal and convenient supramolecular blended strategy to conveniently prepare in situ the uniform size-tunable nanocolumn (NC) structures and further improve the charge capture ability in organic field-effect transistor (OFET) memory. Interestingly, size-tunable PF-CONH/PMMA nanocolumns (PFPM NCs) can be easily in situ-manufactured via during spin-coating processing from the supramolecular blending system of the conjugated polymer PF-CONH and PMMA. After 10,000 s of retention time, the OFET memory devices based on the PFPM NC array as the charge trapping layer showed a 16.4-fold memory window and a 40-fold ON/OFF ratio compared with the pure PMMA film. In addition, the ON/OFF ratio of the PFPM NC device was 1.6 times that of pure PF-CONH. The supramolecular blending mechanism expands the preparation scheme of nanocolumn memory devices and provides a basis for further improving the device stability and the charge trapping ability of the charge trapping layer.
Source: openalex_inverted_index · Quality: baseline

Research context

PolymersNanomaterialsElectronic materials

OpenAlex topics: Analytical Chemistry and Sensors · Porphyrin and Phthalocyanine Chemistry · Molecular Junctions and Nanostructures

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

The Institute of Flexible Electronics (IFE, Future Technologies), Xiamen University, 422 Siming South Road, Xiamen 361005, China

State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China

State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China

School of Flexible Electronics (SoFE) & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, 66 Gongchang Road, Shenzhen 518107, China

School of Electronics Information Engineering & School of Integrated Circuits

Nanjing Vocational University of Industry Technology

Funding

Science and Technology Foundation of Shenzhen City · China Postdoctoral Science Foundation · Basic Research Program of Jiangsu Province · National Natural Science Foundation of China · Senior Talent Foundation of Jiangsu University · Research Center of Industrial Perception and Intelligent Manufacturing Equipment Engineering of Jiangsu Province · Key Science and Technology Project on Future Industry of Xiamen City

References (36)

Show source-provided references
1. 10.1002/adma.20100074010.1002/adma.201000740 ↗
2. 10.1021/acsnano.3c0350510.1021/acsnano.3c03505 ↗
3. 10.1002/adma.20220480410.1002/adma.202204804 ↗
4. 10.1038/s41528-022-00133-310.1038/s41528-022-00133-3 ↗
5. 10.1002/adma.20190149310.1002/adma.201901493 ↗
6. 10.1039/D4TC02842B10.1039/D4TC02842B ↗
7. 10.1002/smll.20170312610.1002/smll.201703126 ↗
8. 10.1002/adma.20170336310.1002/adma.201703363 ↗
9. 10.1038/s41928-019-0331-110.1038/s41928-019-0331-1 ↗
10. 10.1021/acsnano.2c1153810.1021/acsnano.2c11538 ↗
11. 10.1021/jp900571810.1021/jp9005718 ↗
12. 10.1016/j.ijleo.2017.03.07510.1016/j.ijleo.2017.03.075 ↗
13. 10.1063/1.496265710.1063/1.4962657 ↗
14. 10.1002/adma.20241154710.1002/adma.202411547 ↗
15. 10.1002/adma.20230392310.1002/adma.202303923 ↗
16. 10.1002/adfm.20220352710.1002/adfm.202203527 ↗
17. 10.1021/acs.chemmater.0c0143710.1021/acs.chemmater.0c01437 ↗
18. 10.1021/acs.macromol.9b0014510.1021/acs.macromol.9b00145 ↗
19. 10.1126/sciadv.adk946010.1126/sciadv.adk9460 ↗
20. 10.1002/anie.20231726410.1002/anie.202317264 ↗
21. 10.1038/s41578-023-00541-510.1038/s41578-023-00541-5 ↗
22. 10.1016/j.carbpol.2010.10.00910.1016/j.carbpol.2010.10.009 ↗
23. 10.1016/j.memsci.2021.11950710.1016/j.memsci.2021.119507 ↗
24. 10.1002/anie.20230732910.1002/anie.202307329 ↗
25. 10.1038/s41467-022-29803-610.1038/s41467-022-29803-6 ↗
26. 10.1002/smll.20170143710.1002/smll.201701437 ↗
27. 10.1021/acsami.7b1927910.1021/acsami.7b19279 ↗
28. 10.1002/aelm.20210059110.1002/aelm.202100591 ↗
29. 10.1002/adfm.20130410010.1002/adfm.201304100 ↗
30. 10.1038/s41467-020-20515-310.1038/s41467-020-20515-3 ↗
31. 10.1016/j.ijleo.2019.16294410.1016/j.ijleo.2019.162944 ↗
32. 10.1002/smll.20130006810.1002/smll.201300068 ↗
33. 10.1063/1.298819310.1063/1.2988193 ↗
34. 10.1021/jacs.0c0954210.1021/jacs.0c09542 ↗
35. 10.1021/acs.jpclett.2c0360010.1021/acs.jpclett.2c03600 ↗
36. 10.34133/2020/340582610.34133/2020/3405826 ↗