Bidirectional Polarization-Controlled Nonvolatile Ferroelectric SnS/α-In ₂ Se ₃ van der Waals Heterojunction for Reconfigurable Logic-in-Memory

High Resolution Image Download MS PowerPoint Slide Logic-in-memory devices have emerged as a promising architecture for next-generation computing due to their ability to efficiently process large volumes of data. This is especially critical because the traditional von Neumann architecture─where processing and memory units are physically separated─has become a significant bottleneck in the semiconductor industry. To address this challenge, we present a SnS/α-In 2 Se 3 van der Waals (vdW) heterojunction-based ferroelectric field-effect transistor (Fe-FET) that exhibits both nonvolatile memory functionality and reconfigurable logic-in-memory capabilities. The distinctive architecture of this Fe-FET enables both in-plane and out-of-plane ferroelectric polarization. The interplay of these polarizations, modulated by drain and gate voltage pulses, results in four distinct initial resistance states, each demonstrating stable cycling endurance and extended retention. Utilizing these multiple resistance states, fundamental logic operations─including NOR, NAND, AND, and OR─are successfully demonstrated through voltage-controlled manipulation of ferroelectric polarization. This approach achieves genuine logic-in-memory functionality by integrating memory and logic within a single nonvolatile vdW Fe-FET, thereby eliminating data transfer delays and reducing energy consumption. These advancements mark a significant step toward the realization of next-generation, low-power electronic systems with enhanced computational efficiency and storage density.