NiOx Films under Ambient Humidity Regulation: New Strategies to Enhance the Performance of Perovskite Solar Cells
Source abstract
Abstract
Metal halide perovskite materials are highly favored in solar cells owing to their excellent power conversion efficiency, simple preparation process, and low-cost manufacturing. Among the many hole transport materials, inorganic materials are favored because of their remarkable cost effectiveness, chemical stability, and long-term stability. Although NiO x is preferred in inorganic hole transport layer material due to its excellent performance, its high reactivity with the perovskite interface may lead to interface defects and carrier recombination, affecting the long-term stability of the device. To further enhance both the performance and long-term stability of perovskite solar cells, the effect of environmental relative humidity on the performance of NiO x films was discussed in this study. By comparing and analyzing the surface morphology and physical properties of NiO x films prepared under different humidity conditions, we found that relative humidity has a significant effect on the performance of NiO x films and their prepared perovskite solar cells. In particular, NiO x films prepared at 60% relative humidity and fabricated into perovskite solar cells exhibited a significantly higher short-circuit current density ( J sc ) and fill factor (FF). These findings provide an important reference for optimizing the preparation process and enhancing the performance of perovskite-based solar devices.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Perovskite Materials and Applications · Chalcogenide Semiconductor Thin Films · Conducting polymers and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
College of Information Technology, Jilin Engineering Research Center of Optoelectronic Materials and Devices
Jilin Normal University
Jilin Provincial Key Laboratory of Wide Bandgap Semiconductor Material Growth and Device Applications
School of Information Engineering
Yantai Institute of Technology
Funding
Natural Science Foundation of Jilin Province · Jilin Normal University · Jilin Provincial Scientific and Technological Development Plan Project
References (43)
Show source-provided references
1. 10.1016/j.materresbull.2020.11091810.1016/j.materresbull.2020.110918 ↗
2. 10.1016/j.joule.2022.02.00310.1016/j.joule.2022.02.003 ↗
3. 10.1002/advs.20230557210.1002/advs.202305572 ↗
4. 10.1038/nphoton.2013.34110.1038/nphoton.2013.341 ↗
5. 10.1126/science.122860410.1126/science.1228604 ↗
6. 10.1038/s41427-023-00474-z10.1038/s41427-023-00474-z ↗
7. 10.1016/j.nanoen.2017.02.02510.1016/j.nanoen.2017.02.025 ↗
8. 10.1002/adfm.20200361910.1002/adfm.202003619 ↗
9. 10.1039/D0TA11564A10.1039/D0TA11564A ↗
10. 10.1002/adma.20180613310.1002/adma.201806133 ↗
11. 10.1038/s41566-019-0398-210.1038/s41566-019-0398-2 ↗
12. 10.1002/admi.20170062310.1002/admi.201700623 ↗
13. 10.1038/s41586-021-03406-510.1038/s41586-021-03406-5 ↗
14. 10.1021/jp306433g10.1021/jp306433g ↗
15. 10.1002/adma.20220379410.1002/adma.202203794 ↗
16. 10.1021/acs.jpclett.0c0031910.1021/acs.jpclett.0c00319 ↗
17. 10.1002/anie.20221930710.1002/anie.202219307 ↗
18. 10.1016/j.dib.2017.11.06410.1016/j.dib.2017.11.064 ↗
19. 10.1002/anie.20140517610.1002/anie.201405176 ↗
20. 10.1021/acsaem.2c0168110.1021/acsaem.2c01681 ↗
21. 10.1002/smll.20150133010.1002/smll.201501330 ↗
22. 10.1002/adma.20160385010.1002/adma.201603850 ↗
23. 10.1021/acsaem.9b0100410.1021/acsaem.9b01004 ↗
24. 10.1038/nnano.2015.23010.1038/nnano.2015.230 ↗
25. 10.1016/j.joule.2020.06.00410.1016/j.joule.2020.06.004 ↗
26. 10.1016/j.joule.2019.10.00310.1016/j.joule.2019.10.003 ↗
27. 10.1002/aenm.20190348710.1002/aenm.201903487 ↗
28. 10.1002/adma.20230976810.1002/adma.202309768 ↗
29. Liu C. · J. Mater. Chem. C · 2025
30. 10.1007/s12274-021-4056-x10.1007/s12274-021-4056-x ↗
31. 10.1016/j.susc.2006.01.04110.1016/j.susc.2006.01.041 ↗
32. 10.1002/sia.302610.1002/sia.3026 ↗
33. 10.1016/j.apsusc.2010.10.05110.1016/j.apsusc.2010.10.051 ↗
34. 10.1039/c2cp22419d10.1039/c2cp22419d ↗
35. 10.1016/j.joule.2022.06.02610.1016/j.joule.2022.06.026 ↗
36. 10.1002/adfm.20220304910.1002/adfm.202203049 ↗
37. 10.1021/acsaem.8b0107610.1021/acsaem.8b01076 ↗
38. 10.1039/C5EE03560K10.1039/C5EE03560K ↗
39. 10.1021/acsami.3c1744110.1021/acsami.3c17441 ↗
40. 10.1002/adma.20231197010.1002/adma.202311970 ↗
41. 10.1016/j.nanoen.2021.10588210.1016/j.nanoen.2021.105882 ↗
42. 10.1002/adma.20230462510.1002/adma.202304625 ↗
43. 10.1039/D1TA01763B10.1039/D1TA01763B ↗