Localized Surface Doping Induced Ultralow Contact Resistance between Metal and (Bi,Sb)₂Te₃ Thermoelectric Films

Micro thermoelectric devices are expected to further improve the cooling density for the temperature control of electronic devices; nevertheless, the high contact resistivity between metals and semiconductors critically limits their applications, especially in chip cooling with extremely high heat flux. Herein, based on the calculated results, a low specific contact resistivity of ∼10 –7 Ω cm 2 at the interface is required to guarantee a desirable cooling power density of micro devices. Thus, we developed a generally applicable interfacial modulation strategy via localized surface doping of thermoelectric films, and the feasibility of such a doping approach for both n/p-type (Bi,Sb) 2 Te 3 films was demonstrated, which can effectively increase the surface-majority carrier concentration explained by the charge transfer mechanism. With a proper doping level, ultralow specific contact resistivities at the interfaces are obtained for n-type (6.71 × 10 –8 Ω cm 2 ) and p-type (3.70 × 10 –7 Ω cm 2 ) (Bi,Sb) 2 Te 3 layers, respectively, which is mainly attributed to the carrier tunneling enhancement with a narrowed interfacial contact barrier width. This work provides an effective scheme to further reduce the internal resistance of micro thermoelectric coolers, which can also be extended as a kind of universal interfacial modification technique for micro semiconductor devices.