Electrically Triggered Domain Wall Movement in Cu₂Se Semiconductor

The ion-conductive α-Cu 2 Se is found to possess antipolar dipoles, and the movement of the domain boundary under the applied voltage causes change of resistance, showing promising application in memristors. However, due to the complex ordering of Cu ions in the α-Cu 2 Se, there are multiple types of domain wall structure. Here, we show that two typical domain walls in α-Cu 2 Se can be formed, by controlling the voltage during phase transition from high-temperature cubic β-Cu 2 Se to α-Cu 2 Se. We also show by in situ transmission electron microscopy that the formed [01̅0]/[101̅] domain wall performs a reversible movement under the applied external voltage, while the [010]/[01̅0] domain wall does not move. We further demonstrate that pinning of the [010]/[01̅0] domain wall could be due to the formed dislocations in the interface. This study shows that applying preprocess conditions is important to obtain the designed microstructure and resistive properties of α-Cu 2 Se.