Tuning Active Layer Morphology via Ternary Copolymerization with an Asymmetric Benzothiazole Unit as the Third Component to Enhance Photovoltaic Performance
Source abstract
Abstract
Controlling the morphology and phase separation of the active layer is of great significance for the development of efficient organic solar cells. This study employs ternary copolymerization to optimize the phase separation and surface morphology of the active layer. Three terpolymers (PMz-5, PMz-10, and PMz-20) are synthesized by incorporating an asymmetric benzo[ d ]thiazole (BTz) unit as the third component to suppress the strong aggregation of the PM6:L8-BO blend film. Compared to the PM6 blend film, terpolymer blend films exhibit improved surface morphology, an appropriate phase separation scale, and, thus, an enhanced device performance. Furthermore, the incorporation of a BTz unit can lower the highest occupied molecular orbital levels of three terpolymers, which is conducive to charge transport. The champion device PMz-5:L8-BO system achieves an efficiency of 16.57%, featuring a high open-circuit voltage of 0.886 V, a high short-circuit current density of 25.49 mA cm –2, and a remarkable fill factor of 73.35%. This work provides an efficient and straightforward ternary copolymerization strategy that can be used to enhance the device performance.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Conducting polymers and applications · Perovskite Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Chemical Engineering and Light Industry
Guangdong University of Technology
School of Materials and Energy
Guangdong Provincial Laboratory of Chemistry and Fine Chemical Engineering Jieyang Center
Analytical & Testing Center
Funding
National Natural Science Foundation of China · Natural Science Foundation of Guangdong Province · Guangzhou Basic and Applied Basic Research Foundation
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