DataVXACS Applied Materials & InterfacesPaper
journal article·2024-09-25

Pure-Phase Perovskite Quantum Well for Green Light-Emitting Diodes

Guolin Zhang, Runqing Lu, Ziping Liu, Kaijie Ni, Tao Jiang, Xiangru Tao, Guanhaojie Zheng, Chang Yi, Jianpu Wang

ACS Applied Materials & Interfaces· Volume 16· Issue 38
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Source abstract

Abstract

Perovskite multiple quantum wells (MQWs) have shown great potential in the field of light-emitting diodes (LEDs). However, the random formation of QWs with varying well widths ( n numbers) often leads to suboptimal interface defects and charge transport issues. Here, we reveal that the crystallization sequence of bromide-based perovskite MQWs is large- n QWs preceding small- n QWs. With this insight, we prevent the crystallization of subsequent small- n QWs by reducing the crystallization rate, ultimately resulting in the crystallization of only n = 5 QWs. This reduction in the crystallization rate is achieved through the chemical interaction of dual additives with perovskite constituents. Additionally, the chemical interaction effectively passivates the uncoordinated lead ions defects. Consequently, pure-phase perovskite QWs with a high photoluminescence quantum efficiency of 75% are achieved. The resulting green LEDs achieve a peak external quantum efficiency of 17.1% and a maximum luminance of 29,480 cd m –2, which is attractive for full-color display applications of perovskites.
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Research context

Electronic materials

OpenAlex topics: Perovskite Materials and Applications · Quantum Dots Synthesis And Properties · Optical properties and cooling technologies in crystalline materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Flexible Electronics (KLOFE), School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing 211816, People’s Republic of China

Shanghai Synchrotron Radiation Facility (SSRF), Zhangjiang Lab, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201204, People’s Republic of China

School of Materials Science and Engineering & School of Microelectronics and Control Engineering, Changzhou University, Changzhou, Jiangsu 213164, Republic of China

Funding

National Key Research and Development Program of China · Youth Innovation Promotion Association of the Chinese Academy of Sciences · Science and Technology Commission of Shanghai Municipality · Jiangsu Provincial Department of Science and Technology · National Natural Science Foundation of China

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