A Discovery of Pressure-Induced New Semiconductor Electronic Phase Transitions by DFT Calculations: Introducing a Glimpse of a Novel Semiconductor Family

This study introduces a discovery of pressure-induced new semiconductor electronic phase transitions. A novel semiconductor family that exhibits pressure-induced nonmonotonic changes in band gaps was found and meets the definition of phase transitions, challenging the traditional understanding of linear and monotonic band gap modification through pressurization. Our findings suggest a complex interplay of atomic spacing and electron orbital contributions under varying pressure conditions, resulting in the variation of band gaps. This behavior, which includes three distinct steps: first, narrowing, second, broadening, and third, narrowing again and ultimately metalizing; some compounds could bypass step 1, has potential applications in piezoelectric and semiconductor technologies. We propose two new semiconductor electronic phase transitions (SEPT) associated with specific inflection points in the pressure-dependent band gap curve. Our results open avenues for further research into the electronic properties of crystals under high pressure, with the ultimate goal of uncovering the more profound physical principles governing these phenomena.