journal article·2024-05-29Open access

Nonvolatile Modulation of Bi2O2Se/Pb(Zr,Ti)O3 Heteroepitaxy

Yong-Jyun Wang, Zi-Liang Yang, Jia-Wei Chen, Ruixue Zhu, Shang-Hsien Hsieh, Sen-Hao Chang, Hong-Yuan Lin, Chun-Liang Lin, Yi-Chun Chen, Chia-Hao Chen, Bo-Chao Huang, Ya-Ping Chiu, Chao-Hui Yeh, Peng Gao, Po-Wen Chiu, Yi-Cheng Chen, Ying-Hao Chu

ACS Applied Materials & Interfaces· Volume 16· Issue 21

Abstract

High Resolution Image Download MS PowerPoint Slide The pursuit of high-performance electronic devices has driven the research focus toward 2D semiconductors with high electron mobility and suitable band gaps. Previous studies have demonstrated that quasi-2D Bi 2 O 2 Se (BOSe) has remarkable physical properties and is a promising candidate for further exploration. Building upon this foundation, the present work introduces a novel concept for achieving nonvolatile and reversible control of BOSe’s electronic properties. The approach involves the epitaxial integration of a ferroelectric PbZr 0.2 Ti 0.8 O 3 (PZT) layer to modify BOSe’s band alignment. Within the BOSe/PZT heteroepitaxy, through two opposite ferroelectric polarization states of the PZT layer, we can tune the Fermi level in the BOSe layer. Consequently, this controlled modulation of the electronic structure provides a pathway to manipulate the electrical properties of the BOSe layer and the corresponding devices.
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Research context

OpenAlex topics: Electronic and Structural Properties of Oxides · 2D Materials and Applications · Gas Sensing Nanomaterials and Sensors

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300044, Taiwan

Graduate School of Advanced Technology, National Taiwan University, Taipei 106319, Taiwan

Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan

International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China

Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China

National Synchrotron Radiation Research Center, Hsinchu 300092, Taiwan

Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan

Department of Physics, National Cheng Kung University, Tainan 701401, Taiwan

Department of Physics, National Taiwan University, Taipei 106319, Taiwan

Department of Electrical Engineering, National Tsing Hua University, Hsinchu 300044, Taiwan

Funding

Special Project for Research and Development in Key areas of Guangdong Province · National Natural Science Foundation of China · Ministry of Science and Technology, Taiwan · Taiwan Semiconductor Manufacturing Company · National Science and Technology Council · Center for Nanotechnology, Materials Science, and Microsystems at National Tsing Hua University

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