DataVXACS Applied Materials & InterfacesPaper
journal article·2024-04-23

Robust Tunability and Newly Emerged Q Resonance of Ba0.8Sr0.2TiO3-Based Microwave Capacitors under Gamma Irradiations

Changhe Huo, Xinyuan Zhang, Cong Li, Hongtao Xu, Pu Yu, Long Cheng, Changlin Zheng, Zongquan Gu

ACS Applied Materials & Interfaces
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Source abstract

Abstract

The complex resonance of dielectric quality factor Q, combined with a capacitance tunability n higher than 3:1 without any dispersion, was achieved in the voltage-tunable interdigital capacitors (IDCs) based on epitaxial Ba 0.8 Sr 0.2 TiO 3 ferroelectric thin films across the microwave L (1–2 GHz), S (2–4 GHz), and C (4–8 GHz) bands at room temperature. The resonant Q and n features were driven by the microwave responses of the ferroelectric nanodomains engineered in the films. To promote their application in space radiation environments, the evolutions of Q and n both as functions of frequency f (1–8 GHz) and applied electric field E (0–240 kV/cm) were systematically investigated under a series of gamma-ray irradiations up to 100 kGy. The robust capacitance tunability was accompanied by the emergence of an additional Q resonance at 2.3 GHz in most post-irradiated devices, which is ascribed to extra polar nanoregions of expanded surface lattices associated with oxygen vacancies induced by irradiations.
Source: openalex_inverted_index · Quality: baseline

Research context

NanomaterialsElectronic materials

OpenAlex topics: Ferroelectric and Piezoelectric Materials · Microwave Dielectric Ceramics Synthesis · Acoustic Wave Resonator Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Integrated Chips and Systems and School of Microelectronics, Fudan University, Shanghai 200433, P. R. China

State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, P. R. China

State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, P. R. China

School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, P. R. China

State Key Laboratory of Integrated Chips and Systems and School of Microelectronics, Fudan University, Shanghai 200433, P. R. China

Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, P. R. China

Funding

Fudan University · Science and Technology Commission of Shanghai Municipality · National Natural Science Foundation of China · Shanghai Rising-Star Program · State Key Laboratory of Integrated Chips and Systems

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