journal article·2025-03-26

Artificial Synapse with High Weight-Updating Performance Based on Charge-Trapping Mechanism

Zishuo Han, Yanhui Xing, Yu Lin, Zhipeng Yu, Qingchen Han, Dong Zhou, Lifeng Bian, Yuxuan Zeng, Rongbin Zhan, Baoshun Zhang, Zhongming Zeng

ACS Applied Materials & Interfaces· Volume 17· Issue 12
Publisher page

Abstract

Artificial synapses, basic units of neuromorphic hardware, have been studied to emulate synaptic dynamics, which are beneficial for realizing high-quality neural networks. Currently, two-dimensional (2D) material heterojunction structures are widely used in the study of artificial synapses; however, their dynamic weight-updating characteristics are restricted owing to their high nonlinearity and low symmetricity. In this study, we treated h-BN with oxygen plasma to form a charge-trapping layer (CTL), and we prepared 2D ReS 2 /CTL/h-BN heterojunction synapses. The device achieves a large memory window and excellent synaptic performance and simulates the adaptive behavior of the human eye through the synergistic modulation of the optoelectronic double pulse. The mechanism of the effect of trap states in CTL on the weight-updating performance was analyzed, and the device was further optimized. In the long-term potentiation/depression (LTP/D) weight-updating characteristic of the device, the nonlinearity was reduced to 0.63 and symmetricity reached 41.25, which is superior to most similar devices reported to date. Therefore, this research provides insights into improving the LTP/D weight-updating performance of synaptic devices.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Memory and Neural Computing · Neural Networks and Reservoir Computing · Neuroscience and Neural Engineering

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Optoelectronics Technology, Ministry of Education, College of Microelectronics

Beijing University of Technology

Nanofabrication facility

Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences

Laboratory of Semiconductor Display Materials and Chips

Frontier Institute of Chip and System

Fudan University

Funding

National Key Research and Development Program of China · Suzhou Institute of Nanotechnology, Chinese Academy of Sciences · Natural Science Foundation of Jiangsu Province · Natural Science Foundation of Beijing Municipality · National Natural Science Foundation of China

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