journal article·2024-04-27

Sub-5 nm Ultrathin In2O3 Transistors for High-Performance and Low-Power Electronic Applications

Linqiang Xu, Lianqiang Xu, Jun Lan, Yida Li, Qiuhui Li, Aili Wang, Ying Guo, Yee Sin Ang, Ruge Quhe, Jing Lu

Publisher page

Abstract

Ultrathin oxide semiconductors are promising candidates for back-end-of-line (BEOL) compatible transistors and monolithic three-dimensional integration. Experimentally, ultrathin indium oxide (In 2 O 3 ) field-effect transistors (FETs) with thicknesses down to 0.4 nm exhibit an extremely high drain current (10 4 μA/μm) and transconductance (4000 μS/μm). Here, we employ ab initio quantum transport simulation to investigate the performance limit of sub-5 nm gate length ( L g ) ultrathin In 2 O 3 FETs. Based on the International Technology Roadmap for Semiconductors (ITRS) criteria for high-performance (HP) devices, the scaling limit of ultrathin In 2 O 3 FETs can reach 2 nm in terms of on-state current, delay time, and power dissipation. The wide bandgap nature of ultrathin In 2 O 3 (3.0 eV) renders it a suitable candidate for ITRS low-power (LP) electronics with L g down to 3 nm. Notably, both the HP and LP ultrathin In 2 O 3 FETs exhibit superior energy-delay products as compared to those of other common 2D semiconductors such as monolayer MoS 2 and MoTe 2 . These findings unveil the potential of ultrathin In 2 O 3 in HP and LP nanoelectronic device applications.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: ZnO doping and properties · Nanowire Synthesis and Applications · Thin-Film Transistor Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, China

Science, Mathematics and Technology, Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore 487372, Singapore

School of Physics and Electronic Information Engineering, Engineering Research Center of Nanostructure and Functional Materials, Ningxia Normal University, Guyuan 756000, China

School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China

College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China

Zhejiang University─University of Illinois at Urbana─Champaign Institute, Zhejiang University, Haining 314400, China

School of Physics and Telecommunication Engineering, Shaanxi Key Laboratory of Catalysis, Shaanxi University of Technology, Hanzhong 723001, People’s Republic of China

State Key Laboratory of Information Photonics and Optical Communications and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China

Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing 100871, China

Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226000, China

Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, China

Funding

Peking University · Singapore University of Technology and Design · Ministry of Science and Technology of the People's Republic of China · Shenzhen Fundamental Research Program · Department of Education of Guangdong Province · Natural Science Foundation of Ningxia Province · China Scholarship Council · Fundamental Research Funds for the Central Universities · National Natural Science Foundation of China · SUTD-ZJU IDEA Thematic Research Grant Exploratory Project · SMU · Zhujiang Young Talent Program · youth talent training project of Ningxia of China

References (49)

Show source-provided references
1. Moore G. E. · 1965 · 8 · 114
2. 10.1016/j.physrep.2021.07.00610.1016/j.physrep.2021.07.006 ↗
3. 10.1039/C8CS00318A10.1039/C8CS00318A ↗
4. 10.1038/s41586-021-03339-z10.1038/s41586-021-03339-z ↗
5. 10.1038/natrevmats.2016.5210.1038/natrevmats.2016.52 ↗
6. 10.1038/nature1441710.1038/nature14417 ↗
7. 10.1021/nn303513c10.1021/nn303513c ↗
8. 10.1021/nl502603d10.1021/nl502603d ↗
9. 10.1021/acsnano.0c0397810.1021/acsnano.0c03978 ↗
10. 10.1002/inf2.1216810.1002/inf2.12168 ↗
11. 10.1038/s41928-022-00718-w10.1038/s41928-022-00718-w ↗
12. 10.1038/s41563-019-0455-810.1038/s41563-019-0455-8 ↗
13. 10.1038/s41928-021-00561-510.1038/s41928-021-00561-5 ↗
14. Zhou Y. · 2020
15. Prasher R. · J. Nanoelectron. Optoelectron. · 2013 · 5 · 01017
16. 10.1002/adfm.20230867910.1002/adfm.202308679 ↗
17. 10.1002/adma.20220466310.1002/adma.202204663 ↗
18. 10.1002/adma.20200623010.1002/adma.202006230 ↗
19. 10.1088/1468-6996/11/4/04430510.1088/1468-6996/11/4/044305 ↗
20. 10.1002/adma.20220777410.1002/adma.202207774 ↗
21. 10.1002/adma.20110322810.1002/adma.201103228 ↗
22. 10.1109/TED.2022.319892610.1109/TED.2022.3198926 ↗
23. 10.1021/acs.nanolett.0c0396710.1021/acs.nanolett.0c03967 ↗
24. 10.1109/TED.2021.310628210.1109/TED.2021.3106282 ↗
25. 10.1021/acsnano.2c1038310.1021/acsnano.2c10383 ↗
26. 10.1088/1361-648X/ad00f510.1088/1361-648X/ad00f5 ↗
27. 10.1103/PhysRevApplied.17.06401010.1103/PhysRevApplied.17.064010 ↗
28. 10.1088/1361-648X/ab400710.1088/1361-648X/ab4007 ↗
29. 10.1103/PhysRevLett.77.386510.1103/PhysRevLett.77.3865 ↗
30. 10.1002/adfm.20221465310.1002/adfm.202214653 ↗
31. 10.1039/D1TC02937A10.1039/D1TC02937A ↗
32. 10.1039/D1TC03814A10.1039/D1TC03814A ↗
33. 10.1038/srep2918410.1038/srep29184 ↗
34. 10.7567/JJAP.55.09300110.7567/JJAP.55.093001 ↗
35. 10.1103/PhysRevLett.114.06300110.1103/PhysRevLett.114.063001 ↗
36. 10.1038/nnano.2013.27710.1038/nnano.2013.277 ↗
37. 10.1039/C8TC01106K10.1039/C8TC01106K ↗
38. 10.1021/acsami.1c0522910.1021/acsami.1c05229 ↗
39. 10.1038/nature1067610.1038/nature10676 ↗
40. 10.1039/C5NR01052G10.1039/C5NR01052G ↗
41. 10.1103/PhysRevLett.121.05680210.1103/PhysRevLett.121.056802 ↗
42. 10.1021/acsaelm.0c0084010.1021/acsaelm.0c00840 ↗
43. 10.1021/acs.jpcc.1c0175410.1021/acs.jpcc.1c01754 ↗
44. 10.1039/D0NR02170A10.1039/D0NR02170A ↗
45. 10.1039/C8TC05863F10.1039/C8TC05863F ↗
46. 10.1002/adma.20230404410.1002/adma.202304044 ↗
47. 10.1109/TED.2023.323531310.1109/TED.2023.3235313 ↗
48. 10.1109/TED.2021.305322910.1109/TED.2021.3053229 ↗
49. Lin Z. · 2021 · 17.4.110.1109/IEDM19574.2021.9720652 ↗