Photonic Properties of Thin Films Composed of Gallium Nitride Quantum Dots Synthesized by Nonequilibrium Plasma Aerotaxy

Gallium nitride quantum dots (GaN QDs) are a promising material for optoelectronics, but the synthesis of freestanding GaN QDs remains a challenge. To date, the size-dependent photonic properties of freestanding GaN QDs have not been reported. Here, we examine the photonic properties exhibited by thin films composed of GaN QDs synthesized by nonequilibrium plasma aerotaxy. Each film exhibited two photoluminescence peaks after exposure to ambient air. The first peak was in the ultraviolet spectral region, and the second peak was in the visible region. Both peak positions depended on the QD size. Our findings, supported by transient absorption spectroscopy experiments, suggest that conduction band to valence band recombination was the cause of the ultraviolet photoluminescence and that recombination between the conduction band and an acceptor level was the cause of visible photoluminescence. Furthermore, we show that coating the surface of fresh QDs with Al 2 O 3 suppressed the visible region photoluminescence, corroborating the conclusion that the photoactive defect was caused by oxidation in air.