DataVXACS Applied Materials & InterfacesPaper
journal article·2024-03-06

Interfacial Regulation toward Efficient CsPbBr3 Quantum Dot-Based Inverted Perovskite Light-Emitting Diodes

Piaoyang Shen, Xuanyu Zhang, Ruifa Wu, Ting Zhang, Lei Qian, Wei Xu, Kai Kang, Dewei Zhao, Chaoyu Xiang

ACS Applied Materials & Interfaces· Volume 16· Issue 9
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Source abstract

Abstract

Inverted perovskite light-emitting diodes (PeLEDs) based on quantum dots (QDs) are some of the most promising candidates for next-generation lighting and display applications. Due to the strong fluorescence quenching caused by zinc oxide, high performance in such inverted devices remains challenging. Here, we report an efficient inverted green CsPbBr 3 QDs LED using an emitting buffer layer. Ultrathin CsPbBr 3 QD emitters act as the buffer layer to reduce the interface luminescence quenching reaction at the ZnO/upper emitting layer interface, increasing the probability of exciton recombination within the emissive layer and regulating the charge transport, leading to effective carrier recombination. The resulting device exhibits an external quantum efficiency of 13.1%, enhanced by about 4.7 times compared with that without a buffer layer device. This work provides a path to fabricating high-performance inverted PeLEDs.
Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: Perovskite Materials and Applications · Organic Light-Emitting Diodes Research · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

College of Materials Science and Engineering, Engineering Research Center of Alternative Energy Materials & Devices, Ministry of Education, Sichuan University, Chengdu 610065, Sichuan China

Division of Functional Materials and Nanodevices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

Department of Mechanical, Materials and Manufacturing Engineering, University of Nottingham Ningbo China, 199 Taikang East Road, Yinzhou District, Ningbo 315100, Zhejiang, China

Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo 315336, Zhejiang, China

Funding

Sichuan University · National Key Research and Development Program of China · 3315 Innovation Team in Ningbo City · National Natural Science Foundation of China · Natural Science Foundation of Zhejiang Province · YONGJIANG Talent Introduction Programme · Key Laboratory of Flexible Electronics of Zhejiang Province · Innovation and Entrepreneurship Team of Zhejiang Province · Ningbo Key Technologies Research and Development Program

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