Tailoring Contacts for High-Performance 1D Ta₂Pt₃S₈ Field-Effect Transistors

Materials with van der Waals (vdW) unit structures rely on weak interunit vdW forces, facilitating physical separation and advancing nanomaterial research with remarkable electrical properties. Recently, there has been growing interest in one-dimensional (1D) vdW materials, celebrated for their advantageous properties, characterized by reduced dimensionality and the absence of dangling bonds. In this context, we synthesize Ta 2 Pt 3 S 8, a 1D vdW material, and assess its suitability for field-effect transistor (FET) applications. Spectroscopic analysis and electrical characterization confirmed that the band gap and work function of Ta 2 Pt 3 S 8 are 1.18 and 4.77 eV, respectively. Leveraging various electrode materials, we fabricated n-type FETs based on Ta 2 Pt 3 S 8 and identified Cr as the optimal electrode, exhibiting a high mobility of 57 cm 2 V –1 s –1 . In addition, we analyzed the electron transport mechanism in n-type FETs by investigating Schottky barrier height, Schottky barrier tunneling width, and contact resistance. Furthermore, we successfully fabricated p-type operating Ta 2 Pt 3 S 8 FETs using a molybdenum trioxide (MoO 3 ) layer as a high work function contact electrode. Finally, we achieved Ta 2 Pt 3 S 8 nanowire rectifying diodes by creating a p–n junction with asymmetric contact electrodes of Cr and MoO 3, demonstrating an ideality factor of 1.06. These findings highlight the electronic properties of Ta 2 Pt 3 S 8, positioning it as a promising 1D vdW material for future nanoelectronics and functional vdW-based device applications.