journal article·2023-12-06

Multifunctional Multigate One-Transistor with Thin Advanced Materials, Logic-in-Memory, and Artificial Synaptic Behaviors

Guanyi Liu, Zhibiao Xue, Xiaoyang Zhang, Qitao Liu, Yongbo Kuang, Meng He, Ji Xu, Mingming Lv, Hao Xiu, Gangpeng Zhai, Deyu Liu, Yang Xia, Ning Dai, Mingzhi Dai

ACS Applied Materials & Interfaces· Volume 15· Issue 48
Publisher page

Abstract

The high device density and fabrication complexity have hampered the development of the electronics. The advanced designs, which could implement the functions of the circuits with higher device density but less fabrication complexity, are hence required. Meanwhile, the MoS 2 -based devices have recently attracted considerable attention owing to their advantages such as the ultrathin thickness. However, the MoS 2 -based multifunctional multigate one-transistor (MGT) designs with logic-in-memory and artificial synaptic functions have rarely been reported. Here, an MGT structure based on the MoS 2 channel is proposed, with both the logic-in-memory and artificial synaptic behaviors and with more controllable processes than the manual transfer. The proposed MoS 2 -based MGT functions could be attributed to the semijunction mechanism and enhanced effect of the additional terminals with improved controllability. This study is the first to demonstrate that the neuromorphic computing, logic gate, and memory functions can all be achieved in a MoS 2 MGT device without using any additional layers or plasticity to a transistor. The reported results provide a new strategy for developing brain-like systems and next-generation electronics using multifunctional designs and ultrathin materials.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Advanced Sensor and Energy Harvesting Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Spine Surgery, Ningbo No. 6 Hospital, 1059 Zhongshandong Road, Ningbo, Zhejiang 315040, People’s Republic of China

Energy Division, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang Province 315201, China

School of Materials Science and Engineering, Taiyuan University of Science and Technology, Taiyuan 030024, China

Nano Science and Technology Institute, University of Science and Technology of China, Suzhou, Jiangsu 215123, China

Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China

State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China

Funding

Natural Science Foundation of Ningbo Municipality · Science Fund for Distinguished Young Scholars of Zhejiang Province · Science and Technology Commission of Shanghai Municipality · National Natural Science Foundation of China · 3315 Innovation Team in Ningbo City · Chinese Academy of Sciences · Natural Science Foundation of Zhejiang Province · Broadband High-sensitivity Very Long Wavelength Infrared Photodetection Technology

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