n-Type Doping Effect of Anthracene-Based Cationic Dyes in Organic Electronics

n-Type doping for improving the electrical characteristics and air stability of n-type organic semiconductors (OSCs) is important for realizing advanced future electronics. Herein, we report a selection method for an effective n-type dopant with an optimized structure and thickness based on anthracene cationic dyes with high miscibility induced by a molecular structure similar to that of OSCs. Among the doped OSCs evaluated, rhodamine B (RhoB)-doped OSC exhibits the highest density, a smallest roughness of 2.69 nm, a phase deviation of 0.85° according to atomic force microscopy measurements, and the highest electron mobility (μ), showing its high miscibility. Surface doping of RhoB affords the lowest contact resistance of 2.01 × 10 5 Ω cm compared to bulk and contact doping, resulting in an effective doping structure. The RhoB-doped OSC retains 81.63% of the original μ value of 6.13 × 10 –2 cm 2 V –1 s –1 after 15 days, whereas pristine OSC shows a lower μ of 2.33 × 10 –2 cm 2 V –1 s –1 and maintains only 4.41% of the original value after 15 days. Our findings demonstrate that this methodology is effective for the selection of a high-performance n-type dopant for OSCs toward the development of high-performance and air-stable n-type organic electronics.