Source abstract
Abstract
The piezoelectric properties of two-dimensional semiconductor nanobubbles present remarkable potential for application in flexible optoelectronic devices, and the piezoelectric field has emerged as an efficacious pathway for both the separation and migration of photogenerated electron–hole pairs, along with inhibition of recombination. However, the comprehension and control of photogenerated carrier dynamics within nanobubbles still remain inadequate. Hence, this study is dedicated to underscore the importance of in situ detection and detailed characterization of photogenerated electron–hole pairs in nanobubbles to enrich understanding and strategic manipulation in two-dimensional semiconductor materials. Utilizing frequency modulation kelvin probe force microscopy (FM-KPFM) and strain gradient distribution techniques, the existence of a piezoelectric field in monolayer WS 2 nanobubbles was confirmed. Combining w/o and with illumination FM-KPFM, second-order capacitance gradient technique and in situ nanoscale tip-enhanced photoluminescence characterization techniques, the interrelationships among the piezoelectric effect, interlayer carrier transfer, and the funneling effect for photocarrier dynamics process across various nanobubble sizes were revealed. Notably, for a WS 2 /graphene bubble height of 15.45 nm, a 0 mV surface potential difference was recorded in the bubble region w/o and with illumination, indicating a mutual offset of piezoelectric effect, interlayer carrier transfer, and the funneling effect. This phenomenon is prevalent in transition metal dichalcogenides materials exhibiting inversion symmetry breaking. The implication of our study is profound for advancing the understanding of the dynamics of photogenerated electron–hole pair in nonuniform strain piezoelectric systems, and offers a reliable framework for the separation and modulation of photogenerated electron–hole pair in flexible optoelectronic devices and photocatalytic applications.
Source: openalex_inverted_index · Quality: baseline
Affiliations
School of Microelectronics, Fudan University, Shanghai 200433, China
Technology Innovation Institute, 9639, Masdar City, Abu Dhabi, United Arab Emirates
Jiashan Fudan Institute, Jiaxing 314110, China
Shanghai Integrated Circuit Manufacturing Innovation Center, Shanghai 201210, China
Hubei Yangtze Memory Laboratories, Wuhan 430205, China
Microelectronic Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin 78758, United States
Funding
Division of Chemical, Bioengineering, Environmental, and Transport Systems · National Natural Science Foundation of China · State Key Laboratory of ASIC and System, Fudan University