journal article·2023-12-20

Enhanced Exchange Bias in Epitaxial High-Entropy Oxide Heterostructures

Hailin Wang, Haoliang Huang, Yanpeng Feng, Yu-Chieh Ku, Cheng-En Liu, Shanquan Chen, Alan Farhan, Cinthia Piamonteze, Yalin Lu, Yunlong Tang, Jun Wei, Lang Chen, Chun-Fu Chang, Chang-Yang Kuo, Zuhuang Chen

ACS Applied Materials & Interfaces· Volume 15· Issue 50
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Abstract

High-entropy oxides (HEOs) have gained significant interest in recent years due to their unique structural characteristics and potential to tailor functional properties. However, the electronic structure of the HEOs currently remains vastly unknown. In this work, combining magnetometry measurements, scanning transmission electron microscopy, and element-specific X-ray absorption spectroscopy, the electronic structure and magnetic properties of the perovskite-HEO La(Cr 0.2 Mn 0.2 Fe 0.2 Co 0.2 Ni 0.2 )O 3 epitaxial thin films are systemically studied. It is found that enhanced magnetic frustration emerges from competing exchange interactions of the five transition-metal cations with energetically favorable half-filled/full-filled electron configurations, resulting in an unprecedented large vertical exchange bias effect in the single-crystalline films. Furthermore, our findings demonstrate that the La(Cr 0.2 Mn 0.2 Fe 0.2 Co 0.2 Ni 0.2 )O 3 layer with a thickness down to 1 nm can be used as a pinning layer and strongly coupled with a ferromagnetic La 0.7 Sr 0.3 MnO 3 layer, leading to a notable exchange bias and coercivity enhancement in a cooling field as small as 5 Oe. Our studies not only provide invaluable insight into the electronic structure of HEOs but also pave the way for a new era of large bias materials for spintronics devices.
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Research context

OpenAlex topics: High Entropy Alloys Studies · Magnetic and transport properties of perovskites and related materials · High-Temperature Coating Behaviors

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen 518055, China

Anhui Laboratory of Advanced Photon Science and Technology & Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China

Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China

Songshan Lake Materials Laboratory, Dongguan 523808, China

Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan

Department of Physics, Baylor University, Waco, Texas 76798, United States

Paul Scherrer Institut, Forschungstrasse 111, 5232 Villigen, Switzerland

Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China

Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen 518055, China

Max-Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, 01187 Dresden, Germany

National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu 30076, Taiwan

Funding

Guangdong Provincial Department of Science and Technology · National Key Research and Development Program of China · Basic and Applied Basic Research Foundation of Guangdong Province · China Postdoctoral Science Foundation · Fundamental Research Funds for the Central Universities · National Natural Science Foundation of China · Shenzhen Science and Technology Innovation Program · Ministry of Science and Technology, Taiwan · Natural Science Foundation of Anhui Province · Guangdong province · Max Planck-POSTECH/Hsinchu Center for Complex Phase Materials, Max-Planck-Gesellschaft

References (40)

Show source-provided references
1. 10.1038/s41578-019-0170-810.1038/s41578-019-0170-8 ↗
2. 10.1002/adem.20030056710.1002/adem.200300567 ↗
3. 10.3166/acsm.31.633-64810.3166/acsm.31.633-648 ↗
4. 10.1038/ncomms948510.1038/ncomms9485 ↗
5. 10.1039/C7DT02077E10.1039/C7DT02077E ↗
6. 10.1038/s41467-018-05774-510.1038/s41467-018-05774-5 ↗
7. 10.1021/acssuschemeng.0c0384910.1021/acssuschemeng.0c03849 ↗
8. 10.1063/1.497710310.1063/1.4977103 ↗
9. 10.1002/adma.20130094010.1002/adma.201300940 ↗
10. 10.1038/nmat112010.1038/nmat1120 ↗
11. 10.1103/PhysRevLett.110.06720210.1103/PhysRevLett.110.067202 ↗
12. 10.1103/PhysRev.102.141310.1103/PhysRev.102.1413 ↗
13. 10.1016/j.physrep.2005.08.00410.1016/j.physrep.2005.08.004 ↗
14. 10.1088/0953-8984/23/7/07320110.1088/0953-8984/23/7/073201 ↗
15. 10.1103/PhysRevB.100.21443610.1103/PhysRevB.100.214436 ↗
16. 10.1038/nmat424810.1038/nmat4248 ↗
17. 10.1038/s41567-020-01123-w10.1038/s41567-020-01123-w ↗
18. 10.1103/PhysRevB.80.01441810.1103/PhysRevB.80.014418 ↗
19. 10.1038/nmat180910.1038/nmat1809 ↗
20. 10.1103/PhysRevMaterials.3.03440610.1103/PhysRevMaterials.3.034406 ↗
21. 10.1103/PhysRevMaterials.4.01440410.1103/PhysRevMaterials.4.014404 ↗
22. 10.1002/advs.20220039110.1002/advs.202200391 ↗
23. 10.1038/s41598-017-13810-510.1038/s41598-017-13810-5 ↗
24. 10.1103/PhysRevMaterials.4.05440710.1103/PhysRevMaterials.4.054407 ↗
25. 10.1063/1.221718710.1063/1.2217187 ↗
26. 10.1063/1.275310010.1063/1.2753100 ↗
27. 10.1103/PhysRevB.75.21441210.1103/PhysRevB.75.214412 ↗
28. 10.1038/srep0413810.1038/srep04138 ↗
29. 10.1016/0368-2048(93)02041-J10.1016/0368-2048(93)02041-J ↗
30. 10.1103/PhysRevB.72.06040110.1103/PhysRevB.72.060401 ↗
31. 10.1103/PhysRevB.77.12512410.1103/PhysRevB.77.125124 ↗
32. 10.1103/PhysRevB.79.17240210.1103/PhysRevB.79.172402 ↗
33. 10.1103/PhysRevB.64.21442210.1103/PhysRevB.64.214422 ↗
34. 10.1103/PhysRevLett.92.20740210.1103/PhysRevLett.92.207402 ↗
35. 10.1002/advs.20230363010.1002/advs.202303630 ↗
36. 10.1103/PhysRevB.46.1497510.1103/PhysRevB.46.14975 ↗
37. 10.1038/s41467-018-06190-510.1038/s41467-018-06190-5 ↗
38. 10.1016/S0304-8853(01)00390-010.1016/S0304-8853(01)00390-0 ↗
39. 10.1103/PhysRevB.66.01443010.1103/PhysRevB.66.014430 ↗
40. 10.1103/PhysRevLett.91.01720310.1103/PhysRevLett.91.017203 ↗