journal article·2024-01-10

Transparent Patternable Large-Area Graphene p–n Junctions by Photoinduced Electron Doping

Kazuhiro Kirihara, Yuki Okigawa, Masatou Ishihara, Masataka Hasegawa, Masakazu Mukaida, Shohei Horike, Yuqing Wang, Qingshuo Wei

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Abstract

We present a novel approach to achieve n-type doping in graphene and create graphene p–n junctions through a photoinduced electron doping method using photobase generators (PBGs). The unique properties of PBGs allow us to spatially and temporally control the doping process via light activation. The selective irradiation of specific regions on the graphene film enables switching their doping from p- to n-type, as confirmed by changes in the electromotive force and Seebeck and Hall coefficients. We demonstrate a stable (over 2 months) high electron mobility exceeding 1000 cm 2 V –1 s –1 using Hall effect measurements. The precise control of doping and the creation of p–n junctions in graphene offer exciting possibilities for various electronic, optoelectronic, and thermoelectric applications. Furthermore, we fabricate transparent graphene thermocouples with a high electromotive force of approximately ca. 80 μV/K, which validates the reliability and effectiveness of our approach for temperature sensing applications. This work paves the way for high-performance graphene-based electronic devices via controlled doping and patterning techniques. These findings provide valuable insights for the practical implementation of graphene in various fields.
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Research context

OpenAlex topics: Graphene research and applications · Carbon Nanotubes in Composites · Nanowire Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Advanced Operando-Measurement Technology Open Innovation Laboratory (OPERANDO-OIL), National Institute of Advanced Industrial Science and Technology (AIST), 5-1-5 Kashiwanoha, Kashiwa 277-8565, Japan

Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan

Nano Carbon Device Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan

Department of Chemical Science and Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai-cho, Kobe 657-8501, Japan

Research Center for Membrane and Film Technology, Kobe University, 1-1 Rokkodai-cho, Kobe 657-8501, Japan

Center for Environmental Management, Kobe University, 1-1 Rokkodai-cho, Kobe 657-8501, Japan

Graduate School of Life and Environmental Sciences, University of Tsukuba, 1-1-1, Tennodai, Tsukuba, Ibaraki 305-8572, Japan

Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8577, Japan

Funding

Japan Society for the Promotion of Science

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