Mixed Dimensional ZnO/WSe₂ Piezo-gated Transistor with Active Millinewton Force Sensing

This work demonstrates a mixed-dimensional piezoelectric-gated transistor in the microscale that could be used as a millinewton force sensor. The force-sensing transistor consists of 1D piezoelectric zinc oxide (ZnO) nanorods (NRs) as the gate control and multilayer tungsten diselenide (WSe₂) as the transistor channel. The applied mechanical force on piezoelectric NRs can induce a drain-source current change (ΔI_ds) on the WSe₂ channel. The different doping types of the WSe₂ channel have been found to lead to different directions of ΔI_ds. The pressure from the calibration weight of 5 g has been observed to result in an ∼30% I_ds change for ZnO NRs on the p-type doped WSe₂ device and an ∼-10% I_ds change for the device with an n-type doped WSe₂. The outcome of this work would be useful for applications in future human-machine interfaces and smart biomedical tools.