DataVXACS Applied Materials & InterfacesPaper
journal article·2022-07-06

Atomically Thin Delta-Doping of Self-Assembled Molecular Monolayers by Flash Lamp Annealing for Si-Based Deep UV Photodiodes

Shannan Chang, Jiajing He, Slawomir Prucnal, Jieyin Zhang, Jianjun Zhang, Shengqiang Zhou, Manfred Helm, Yaping Dan

ACS Applied Materials & Interfaces· Volume 14· Issue 26
Publisher page
Source abstract

Abstract

Delta doping (δ-doping) can find a wide range of applications in advanced metal oxide semiconductor field effect transistors, deep UV photodetectors, quantum devices, and others. In this work, we formed a δ-doping layer in silicon by employing flash lamp annealing to treat the PCl3 monolayers grafted on silicon surfaces. The δ-doping layer is atomically thin (<1 nm). Low-temperature Hall measurements show that the δ-doping layer is in a metallic state and exhibits a weak localization phenomenon, implying that a two-dimensional electron gas is formed. When we form such an n-type δ-doping layer on a highly doped p-type Si substrate, a highly sensitive solar-blind UV photodetector is created, which traditionally was only possible by using wide band gap semiconductors such as gallium nitride (GaN) or silicon carbide (SiC).
Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materialsMaterials processing

OpenAlex topics: Quantum and electron transport phenomena · Semiconductor Quantum Structures and Devices · Molecular Junctions and Nanostructures

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai 200240, China

University of Michigan─Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China

Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, Dresden D-01328, Germany

National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Funding

Shanghai Municipal Education Commission · National Natural Science Foundation of China

References (33)

Show source-provided references
1. 10.1080/1040843930824341510.1080/10408439308243415 ↗
2. 10.1016/0924-4247(89)80034-210.1016/0924-4247(89)80034-2 ↗
3. 10.1557/PROC-220-46510.1557/PROC-220-465 ↗
4. 10.4028/www.scientific.net/msf.389-393.107710.4028/www.scientific.net/msf.389-393.1077 ↗
5. 10.1063/1.9872210.1063/1.98722 ↗
6. 10.1016/j.surfcoat.2004.04.04610.1016/j.surfcoat.2004.04.046 ↗
7. 10.1186/1556-276x-9-50410.1186/1556-276x-9-504 ↗
8. 10.1209/0295-5075/109/2300110.1209/0295-5075/109/23001 ↗
9. 10.1063/1.480078110.1063/1.4800781 ↗
10. 10.1016/j.mssp.2016.10.04010.1016/j.mssp.2016.10.040 ↗
11. 10.1038/s41467-017-02564-310.1038/s41467-017-02564-3 ↗
12. 10.1021/acsaelm.1c0027610.1021/acsaelm.1c00276 ↗
13. 10.1016/j.susc.2005.11.03010.1016/j.susc.2005.11.030 ↗
14. 10.1021/la001294510.1021/la0012945 ↗
15. 10.1063/1.235968410.1063/1.2359684 ↗
16. 10.1021/nn401640710.1021/nn4016407 ↗
17. 10.1016/s0040-6090(00)01490-510.1016/s0040-6090(00)01490-5 ↗
18. 10.1002/pssa.221101011310.1002/pssa.2211010113 ↗
19. 10.1002/j.1538-7305.1960.tb03928.x10.1002/j.1538-7305.1960.tb03928.x ↗
20. 10.1063/1.238693510.1063/1.2386935 ↗
21. 10.1021/nl048808v10.1021/nl048808v ↗
22. 10.1016/s0081-1947(08)60091-010.1016/s0081-1947(08)60091-0 ↗
23. 10.1007/978-3-642-82516-3_410.1007/978-3-642-82516-3_4 ↗
24. 10.1016/0370-1573(84)90103-010.1016/0370-1573(84)90103-0 ↗
25. 10.1016/0370-1573(86)90027-x10.1016/0370-1573(86)90027-x ↗
26. 10.1103/physrevb.70.24531110.1103/physrevb.70.245311 ↗
27. 10.1103/physrevlett.84.248910.1103/physrevlett.84.2489 ↗
28. 10.1143/ptp.63.70710.1143/ptp.63.707 ↗
29. Butcher P. N. · 1993 · 9510.1007/978-1-4899-2415-5_3 ↗
30. 10.1103/physrevb.58.669210.1103/physrevb.58.6692 ↗
31. 10.1103/physrevb.73.03540110.1103/physrevb.73.035401 ↗
32. 10.1116/1.475037210.1116/1.4750372 ↗
33. 10.1063/1.480792510.1063/1.4807925 ↗