Nonvolatile Reconfigurable Logic Device Based on Photoinduced Interfacial Charge Trapping in van der Waals Gap

Due to the increasing complexity in miniaturization of electronic devices, reconfigurable field-effect transistors (RFETs) have emerged as a solution. Although the foundational concepts of RFETs have matured over two decades, ongoing breakthroughs are needed to address challenges such as improving the device performance as well as achieving balanced symmetry between n -type and p -type transport modes with long-term stability. Herein, we present a nonvolatile WSe 2 -based RFET that utilizes photoassisted interfacial charge trapping at the h-BN and SiO 2 interface. Unlike typical RFETs with two gate electrodes, our RFETs achieved polarity control with a single operating gate activated exclusively under white-light exposure. The threshold voltage was tunable, ranging from 27.4 (−31.6 V) to 0.9 (+19.5 V), allowing selective activation of n -type ( p -type) operation at V GS = 0 V. Additionally, our WSe 2 -based RFETs show superior repeatability and long-term stability. Leveraging these advantages, various reconfigurable logic circuits were successfully demonstrated, including complementary inverters and switch circuits as well as pull-up and pull-down circuits, highlighting the potential of WSe 2 FETs for future advancements of integrated circuits.