journal article·2023-08-23

Reinforcing Synaptic Plasticity of Defect-Tolerant States in Alloyed 2D Artificial Transistors

Jina Bak, Seunggyu Kim, Kyumin Park, Jeechan Yoon, Mino Yang, Un Jeong Kim, Hideo Hosono, Jihyang Park, Bolim You, Ojun Kwon, Byungjin Cho, Sang-Won Park, Myung Gwan Hahm, Moonsang Lee

ACS Applied Materials & Interfaces· Volume 15· Issue 33
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Abstract

While two-dimensional (2D) materials possess the desirable future of neuromorphic computing platforms, unstable charging and de-trapping processes, which are inherited from uncontrollable states, such as the interface trap between nanocrystals and dielectric layers, can deteriorate the synaptic plasticity in field-effect transistors. Here, we report a facile and effective strategy to promote artificial synaptic devices by providing physical doping in 2D transition-metal dichalcogenide nanomaterials. Our experiments demonstrate that the introduction of niobium (Nb) into 2D WSe 2 nanomaterials produces charge trap levels in the band gap and retards the decay of the trapped charges, thereby accelerating the artificial synaptic plasticity by encouraging improved short-/long-term plasticity, increased multilevel states, lower power consumption, and better symmetry and asymmetry ratios. Density functional theory calculations also proved that the addition of Nb to 2D WSe 2 generates defect tolerance levels, thereby governing the charging and de-trapping mechanisms of the synaptic devices. Physically doped electronic synapses are expected to be a promising strategy for the development of bioinspired artificial electronic devices.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Memory and Neural Computing · 2D Materials and Applications · Ferroelectric and Negative Capacitance Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering, Inha University, 100 Inha-ro, Michuhol-gu, Incheon 22212, Republic of Korea

Korea Basic Science Institute Seoul, 145 anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea

Advanced Sensor Lab, Samsung Advanced Institute of Technology, 130 Samsung-ro, Yeongtong-gu, Suwon, Gyeonggi 16678, Republic of Korea

MDX Research Center for Element Strategy, International Research Frontiers Initiative, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

Department of Advanced Material Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea

Department of Urban, Energy, and Environmental Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-Gu, Cheongju, Chungbuk 28644, Republic of Korea

Department of Chemical and Materials Engineering, University of Suwon, 17 Wauan-gil, Bongdam-eup, Hwaseong, Gyeonggi 18323, Republic of Korea

Funding

Ministry of Education, Culture, Sports, Science and Technology · National Research Foundation of Korea

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