journal article·2024-06-05

Ultrasensitive Graphene Field-Effect Biosensors Based on Ferroelectric Polarization of Lithium Niobate for Breast Cancer Marker Detection

Qingxi Jin, Kuo Men, Gangrong Li, Tianlang Ou, Ziwei Lian, Xin Deng, Hongbin Zhao, Qingzhu Zhang, Anjie Ming, Qianhui Wei, Feng Wei, Hailing Tu

ACS Applied Materials & Interfaces· Volume 16· Issue 22
Publisher page

Abstract

Herein, we present a novel ultrasensitive graphene field-effect transistor (GFET) biosensor based on lithium niobate (LiNbO 3 ) ferroelectric substrate for the application of breast cancer marker detection. The electrical properties of graphene are varied under the electrostatic field, which is generated through the spontaneous polarization of the ferroelectric substrate. It is demonstrated that the properties of interface between graphene and solution are also altered due to the interaction between the electrostatic field and ions. Compared with the graphene field-effect biosensor based on the conventional Si/SiO 2 gate structure, our biosensor achieves a higher sensitivity to 64.7 mV/decade and shows a limit of detection down to 1.7 fM (equivalent to 12 fg·mL –1 ) on the detection of microRNA21 (a breast cancer marker). This innovative design combining GFETs with ferroelectric substrates holds great promise for developing an ultrahigh-sensitivity biosensing platform based on graphene that enables rapid and early disease diagnosis.
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Research context

OpenAlex topics: Graphene and Nanomaterials Applications · Advanced biosensing and bioanalysis techniques · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co., Ltd., Beijing 100088, China

GRIMAT Engineering Institute Co., Ltd., Beijing 101407, China

General Research Institute for Nonferrous Metals, Beijing 100088, China

GRINM (Guangdong) Institute for Advanced Materials and Technology, Foshan 528000, China

Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Funding

National Natural Science Foundation of China · Guangdong Province

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