journal article·2023-07-26

Doping-Free High-Performance Photovoltaic Effect in a WSe2 Lateral p-n Homojunction Formed by Contact Engineering

Hai Yen Le Thi, Tien Dat Ngo, Nhat Anh Nguyen Phan, Hoseong Shin, Inayat Uddin, A. Venkatesan, Chi-Te Liang, Nobuyuki Aoki, Won Jong Yoo, Kenji Watanabe, Takashi Taniguchi, Gil-Ho Kim

ACS Applied Materials & Interfaces· Volume 15· Issue 29
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Abstract

Two-dimensional transition metal dichalcogenides (TMDs) are promising materials for semiconductor nanodevices owing to their flexibility, transparency, and appropriate band gaps. A variety of optoelectronic and electronic devices based on TMDs p-n diodes have been extensively investigated due to their unique advantages. However, improving their performance is challenging for commercial applications. In this study, we propose a facile and doping-free approach based on the contact engineering of a few-layer tungsten di-selenide to form a lateral p-n homojunction photovoltaic. By combining surface and edge contacts for p-n diode fabrication, the photovoltaic effect is achieved with a high fill factor of ≈0.64, a power conversion efficiency of up to ≈4.5%, and the highest external quantum efficiency with a value of ≈67.6%. The photoresponsivity reaches 283 mA/W, indicating excellent photodiode performance. These results demonstrate that our technique has great potential for application in next-generation optoelectronic devices.
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Research context

OpenAlex topics: 2D Materials and Applications · Nanowire Synthesis and Applications · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Sungkyunkwan Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea

Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea

Graduate Institute of Applied Physics, National Taiwan University, Taipei 106, Taiwan

Department of Materials Science, Chiba University, Chiba 263-8522, Japan

Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

International Center for Material Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

Funding

National Research Foundation of Korea · Japan Society for the Promotion of Science · National Natural Science Foundation of China

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