journal article·2023-08-23Open access

Ultralow Power and Shifting-Discretized Magnetic Racetrack Memory Device Driven by Chirality Switching and Spin Current

Shen Li, Xiaoyang Lin, Pingzhi Li, Suteng Zhao, Zhizhong Si, Guodong Wei, Bert Koopmans, Reinoud Lavrijsen, Weisheng Zhao

ACS Applied Materials & Interfaces· Volume 15· Issue 33

Abstract

Magnetic racetrack memory has significantly evolved and developed since its first experimental verification and is considered one of the most promising candidates for future high-density on-chip solid-state memory. However, both the lack of a fast and precise magnetic domain wall (DW) shifting mechanism and the required extremely high DW motion (DWM) driving current make the racetrack difficult to commercialize. Here, we propose a method for coherent DWM that is free from the above issues, which is driven by chirality switching (CS) and an ultralow spin–orbit–torque (SOT) current. The CS, as the driving force of DWM, is achieved by the sign change of the Dzyaloshinskii–Moriya interaction, which is further induced by a ferroelectric switching voltage. The SOT is used to break the symmetry when the magnetic moment is rotated in the Bloch direction. We numerically investigate the underlying principle and the effect of key parameters on the DWM by micromagnetic simulations. Under the CS mechanism, a fast (∼10 2 m/s), ultralow energy (∼5 attoJoule), and precisely discretized DWM can be achieved. Considering that skyrmions with topological protection and smaller size are also promising for future racetracks, we similarly evaluate the feasibility of applying such a CS mechanism to a skyrmion. However, we find that the CS causes it to “breathe” instead of moving. Our results demonstrate that the CS strategy is suitable for future DW racetrack memory with ultralow power consumption and discretized DWM.
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Research context

OpenAlex topics: Magnetic properties of thin films · Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China

Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands

Hefei Innovation Research Institute, Beihang University, Hefei 230013, China

Funding

H2020 Marie Sklodowska-Curie Actions · HORIZON EUROPE Marie Sklodowska-Curie Actions · Beijing Municipal Natural Science Foundation · China Scholarship Council · National Natural Science Foundation of China

References (55)

Show source-provided references
1. 10.1021/acsami.0c1018410.1021/acsami.0c10184 ↗
2. 10.1016/j.sse.2016.07.00610.1016/j.sse.2016.07.006 ↗
3. 10.1126/science.114579910.1126/science.1145799 ↗
4. 10.1109/JPROC.2020.297571910.1109/JPROC.2020.2975719 ↗
5. 10.1016/j.physrep.2022.02.00110.1016/j.physrep.2022.02.001 ↗
6. 10.1038/nnano.2015.4110.1038/nnano.2015.41 ↗
7. 10.1038/nmat302010.1038/nmat3020 ↗
8. 10.1002/aelm.20220061310.1002/aelm.202200613 ↗
9. 10.1038/nnano.2013.10210.1038/nnano.2013.102 ↗
10. Atoofian, E. In Reducing Shift Penalty in Domain Wall Memory through Register Locality, International Conference on Compilers, Architecture and Synthesis for Embedded Systems (CASES); IEEE: Amsterdam, Netherlands, 2015; pp 177–186.10.1109/CASES.2015.7324558 ↗
11. Zhang, C.; Sun, G.; Zhang, X.; Zhang, W.; Zhao, W.; Wang, T.; Liang, Y.; Liu, Y.; Wang, Y.; Shu, J. In Hi-Fi Playback: Tolerating Position Errors in Shift Operations of Racetrack Memory, Proceedings of the 42nd Annual International Symposium on Computer Architecture; ACM: Portland Oregon, 2015; pp 694–706.10.1145/2749469.2750388 ↗
12. 10.1109/LCA.2019.289930610.1109/LCA.2019.2899306 ↗
13. 10.1103/PhysRevApplied.11.02402310.1103/PhysRevApplied.11.024023 ↗
14. 10.1103/PhysRevLett.97.20720510.1103/PhysRevLett.97.207205 ↗
15. 10.1103/PhysRevApplied.3.03400810.1103/PhysRevApplied.3.034008 ↗
16. 10.1002/pssr.20180019710.1002/pssr.201800197 ↗
17. 10.1063/1.354958910.1063/1.3549589 ↗
18. 10.1038/s41928-022-00735-910.1038/s41928-022-00735-9 ↗
19. 10.1038/nmat355310.1038/nmat3553 ↗
20. 10.1103/PhysRevLett.104.09720310.1103/PhysRevLett.104.097203 ↗
21. 10.1038/nmat367510.1038/nmat3675 ↗
22. 10.1038/ncomms1353210.1038/ncomms13532 ↗
23. 10.1038/natrevmats.2017.3110.1038/natrevmats.2017.31 ↗
24. 10.1145/333333610.1145/3333336 ↗
25. 10.1038/nphys388310.1038/nphys3883 ↗
26. 10.1038/nnano.2015.31510.1038/nnano.2015.315 ↗
27. 10.1103/PhysRevLett.124.20720310.1103/PhysRevLett.124.207203 ↗
28. 10.1103/PhysRevLett.126.11760310.1103/PhysRevLett.126.117603 ↗
29. 10.1038/s41563-018-0204-410.1038/s41563-018-0204-4 ↗
30. 10.1002/adma.20190441510.1002/adma.201904415 ↗
31. 10.1103/PhysRevB.103.05441710.1103/PhysRevB.103.054417 ↗
32. 10.1038/s41467-022-32959-w10.1038/s41467-022-32959-w ↗
33. 10.1126/sciadv.ade683610.1126/sciadv.ade6836 ↗
34. 10.1103/PhysRevLett.124.15720210.1103/PhysRevLett.124.157202 ↗
35. 10.1103/PhysRevX.11.02101510.1103/PhysRevX.11.021015 ↗
36. 10.1093/nsr/nwac02110.1093/nsr/nwac021 ↗
37. 10.1038/s41565-019-0534-710.1038/s41565-019-0534-7 ↗
38. 10.1038/nmat493410.1038/nmat4934 ↗
39. 10.1103/RevModPhys.84.25310.1103/RevModPhys.84.253 ↗
40. 10.1088/1361-6463/ac4fd310.1088/1361-6463/ac4fd3 ↗
41. 10.1103/PhysRevB.83.13443210.1103/PhysRevB.83.134432 ↗
42. 10.1063/1.497843110.1063/1.4978431 ↗
43. 10.1103/PhysRevMaterials.6.02440610.1103/PhysRevMaterials.6.024406 ↗
44. 10.1021/acsami.9b0556210.1021/acsami.9b05562 ↗
45. 10.1016/j.matchar.2020.11059710.1016/j.matchar.2020.110597 ↗
46. 10.1007/s10853-019-03517-510.1007/s10853-019-03517-5 ↗
47. 10.1063/1.489918610.1063/1.4899186 ↗
48. 10.1103/PhysRevB.88.18442210.1103/PhysRevB.88.184422 ↗
49. Kwon T. · J. Korean Phys. Soc. · 2005 · 46 · 5
50. 10.1021/acs.nanolett.0c0185210.1021/acs.nanolett.0c01852 ↗
51. 10.1038/s41563-022-01266-610.1038/s41563-022-01266-6 ↗
52. 10.1038/s41467-021-22819-410.1038/s41467-021-22819-4 ↗
53. 10.1103/PhysRevLett.127.12720310.1103/PhysRevLett.127.127203 ↗
54. 10.1103/PhysRevLett.119.07720510.1103/PhysRevLett.119.077205 ↗
55. 10.1038/nnano.2013.21010.1038/nnano.2013.210 ↗