DataVXACS Applied Materials & InterfacesPaper
journal article·2023-07-19Open access

Improved Performance of Organic Light-Emitting Transistors Enabled by Polyurethane Gate Dielectric

Arthur R. J. Barreto, Graziâni Candiotto, Harold J. C. Avila, Rafael S. Carvalho, Aline Magalhães dos Santos, Mario Prosa, Emilia Benvenuti, Salvatore Moschetto, Stefano Toffanin, Rodrigo B. Capaz, Michele Muccini, Marco Cremona

ACS Applied Materials & Interfaces· Volume 15· Issue 28
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Source abstract

Abstract

Organic light-emitting transistors (OLETs) are multifunctional optoelectronic devices that combine in a single structure the advantages of organic light-emitting diodes (OLEDs) and organic field-effect transistors (OFETs). However, low charge mobility and high threshold voltage are critical hurdles to practical OLET implementation. This work reports on the improvements obtained by using polyurethane films as a dielectric layer material in place of the standard poly(methyl methacrylate) (PMMA) in OLET devices. It was found that polyurethane drastically reduces the number of traps in the device, thereby improving electrical and optoelectronic device parameters. In addition, a model was developed to rationalize an anomalous behavior at the pinch-off voltage. Our findings represent a step forward to overcome the limiting factors of OLETs that prevent their use in commercial electronics by providing a simple route for low-bias device operation.
Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: Organic Light-Emitting Diodes Research · Organic Electronics and Photovoltaics · Thin-Film Transistor Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Organic and Molecular Optoelectronics Laboratory (LOEM), Department of Physics, Pontifical Catholic University of Rio de Janeiro, Rio de Janeiro 22451-900, RJ, Brazil

Institute of Physics, Federal University of Rio de Janeiro, Rio de Janeiro 21941-909, RJ, Brazil

Department of Physics, University of Atlantic, Puerto Colombia 081008, Atlántico, Colombia

Institute of Nanostructured Materials (ISMN), National Research Council (CNR), via P. Gobetti 101, 40129 Bologna, Italy

Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas 13083-100, SP, Brazil

Funding

Instituto Nacional de Ci?ncia e Tecnologia em Eletr?nica Org?nica · H2020 LEIT Information and Communication Technologies · Ministero dell?Istruzione, dell?Universit? e della Ricerca · Conselho Nacional de Desenvolvimento Cient?fico e Tecnol?gico · Financiadora de Estudos e Projetos · Instituto Nacional de Ci?ncia e Tecnologia de Informa??o Qu?ntica · Funda??o Carlos Chagas Filho de Amparo ? Pesquisa do Estado do Rio de Janeiro · Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior · Instituto Nacional de Ci?ncia e Tecnologia em Nanomateriais de Carbono

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