Optoelectronic Devices of Large-Scale Transferred All-Inorganic Lead Halide Perovskite Thin Films

We report the large-scale transfer process for monocrystalline CsPbBr 3 thin films prepared by chemical vapor deposition (CVD) with excellent optical properties and stability. The transfer process is robust, simple, and effective, in which CsPbBr 3 thin films could be transferred to several substrates and effectively avoid chemical or physical fabrication processes to damage the perovskite surface. Moreover, the transfer process endows CsPbBr 3 and substrates with atomically clean and electronically flat interfaces. We utilize this transfer process to realize several optoelectronic devices, including a photonic laser with a threshold of 61 μJ/cm 2, a photodetector with a responsivity of 2.4 A/W, and a transistor with a hole mobility of 11.47 cm 2 V –1 s –1 . High device performances mainly originate from low defects of high-quality single-crystal perovskite and seamless contact between CsPbBr 3 and target substrates. The large-scale nondestructive transfer process provides promising opportunities for optoelectronic applications based on monocrystalline perovskites.