DataVXACS Applied Materials & InterfacesPaper
journal article·2016-11-23

Enhanced Ultraviolet Random Lasing from Au/MgO/ZnO Heterostructure by Introducing p-Cu2O Hole-Injection Layer

Cen Zhang, Juan Zhang, Weizhen Liu, Haiyang Xu, Shuai Hou, Chunliang Wang, Liu Yang, Zhongqiang Wang, Xinhua Wang, Yichun Liu

ACS Applied Materials & Interfaces· Volume 8· Issue 46
Publisher page
Source abstract

Abstract

Ultraviolet light-emitting devices (LEDs) were fabricated on the basis of Au/MgO/ZnO metal/insulator/semiconductor (MIS) heterostructures. By introducing a thermally oxidized p-type Cu 2 O hole-injection layer into this MIS structure, enhanced ultraviolet electroluminescence (EL) and random lasing with reduced threshold injection current are achieved. The enhancement mechanism is attributed to effective hole transfer from p-Cu 2 O to i-MgO under forward bias, which increases the initial carrier concentration of MgO dielectric layer and further promotes “impact-ionization” effect induced carrier generation and injection. The current study proposes a new and effective route to improve the EL performance of MIS junction LEDs via introducing extrinsic hole suppliers.
Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: Random lasers and scattering media · ZnO doping and properties · Metamaterials and Metasurfaces Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun 130024, China

State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

Funding

State Administration of Foreign Experts Affairs · Ministry of Education of the People's Republic of China · China Postdoctoral Science Foundation · National Natural Science Foundation of China · Jilin Province · State Key Laboratory of Applied Optics

References (36)

Show source-provided references
1. 10.1038/nphoton.2008.13510.1038/nphoton.2008.135 ↗
2. 10.1038/nphoton.2010.22010.1038/nphoton.2010.220 ↗
3. 10.1038/nnano.2014.30810.1038/nnano.2014.308 ↗
4. 10.1021/am501028310.1021/am5010283 ↗
5. 10.1021/acsami.5b0896110.1021/acsami.5b08961 ↗
6. 10.1038/nnano.2011.9710.1038/nnano.2011.97 ↗
7. 10.1002/adom.20120006210.1002/adom.201200062 ↗
8. 10.7567/APEX.8.09520210.7567/APEX.8.095202 ↗
9. 10.1021/acsami.5b0838210.1021/acsami.5b08382 ↗
10. 10.1002/adma.20080290710.1002/adma.200802907 ↗
11. 10.1002/adma.20090362310.1002/adma.200903623 ↗
12. 10.1002/adma.20080268610.1002/adma.200802686 ↗
13. 10.1016/j.nanoen.2014.12.03910.1016/j.nanoen.2014.12.039 ↗
14. 10.1016/j.nanoen.2014.07.01910.1016/j.nanoen.2014.07.019 ↗
15. 10.1063/1.362592510.1063/1.3625925 ↗
16. 10.1039/c2jm33225f10.1039/c2jm33225f ↗
17. 10.1063/1.493747210.1063/1.4937472 ↗
18. 10.1364/OE.22.01673110.1364/OE.22.016731 ↗
19. 10.1364/OPTICA.2.00055810.1364/OPTICA.2.000558 ↗
20. 10.1063/1.32513710.1063/1.325137 ↗
21. 10.1063/1.32285910.1063/1.322859 ↗
22. 10.1063/1.173058110.1063/1.1730581 ↗
23. 10.1103/PhysRevB.77.07320310.1103/PhysRevB.77.073203 ↗
24. 10.1149/2.029202jes10.1149/2.029202jes ↗
25. 10.1039/c3cp55505d10.1039/c3cp55505d ↗
26. 10.1039/C4CE01788A10.1039/C4CE01788A ↗
27. 10.1364/OE.17.01442610.1364/OE.17.014426 ↗
28. 10.1063/1.151716410.1063/1.1517164 ↗
29. 10.1063/1.307280410.1063/1.3072804 ↗
30. 10.1016/j.jlumin.2006.01.05610.1016/j.jlumin.2006.01.056 ↗
31. 10.1016/j.jlumin.2006.01.07310.1016/j.jlumin.2006.01.073 ↗
32. 10.1002/adma.20110218410.1002/adma.201102184 ↗
33. 10.1021/nl202619d10.1021/nl202619d ↗
34. 10.1021/acsami.5b0034010.1021/acsami.5b00340 ↗
35. 10.1109/LED.2010.208942410.1109/LED.2010.2089424 ↗
36. 10.1103/PhysRevLett.93.26390110.1103/PhysRevLett.93.263901 ↗