journal article·2023-09-06

Insights into the Semiconductor SERS Activity: The Impact of the Defect-Induced Energy Band Offset and Electron Lifetime Change

Yinghao Xu, Renli Chen, Shenlong Jiang, Lu Zhou, Tao Jiang, Chenjie Gu, Diing Shenp Ang, Lucia Petti, Qun Zhang, Xiang Shen, Jiaguang Han, Jun Zhou

ACS Applied Materials & Interfaces· Volume 15· Issue 35
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Abstract

The significant boost in surface-enhanced Raman scattering (SERS) by the chemical enhancement of semiconducting oxides is a pivotal finding. It offers a prospective path toward high uniformity and low-cost SERS substrates. However, a detailed understanding of factors that influence the charge transfer process is still insufficient. Herein, we reveal the important role of defect-induced band offset and electron lifetime change in SERS evolution observed in a MoO 3 oxide semiconductor. By modulating the density of oxygen vacancy defects using ultraviolet (UV) light irradiation, SERS is found to be improved with irradiation time in the first place, but such improvement later deteriorates for prolonged irradiation even if more defects are generated. Insights into the observed SERS evolution are provided by ultraviolet photoelectron spectroscopy and femtosecond time-resolved transient absorption spectroscopy measurements. Results reveal that (1) a suitable offset between the energy band of the substrate and the orbitals of molecules is facilitated by a certain defect density and (2) defect states with relatively long electron lifetime are essential to achieve optimal SERS performance.
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Research context

OpenAlex topics: Gold and Silver Nanoparticles Synthesis and Applications · Copper-based nanomaterials and applications · Quantum Dots Synthesis And Properties

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Affiliations

Institute of Photonics, Ningbo University, Ningbo, Zhejiang 315211, P. R. China

The Research Institute of Advanced Technologies, Ningbo University, Ningbo, Zhejiang 315211, P. R. China

Department of Chemical Physics, Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China

Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, P. R. China

Centre for Terahertz Waves and College of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072, P. R. China

Institute of Applied Sciences and Intelligent Systems-ISASI, CNR, via Campi Flegrei, 34, 80078 Pozzuoli, Napoli Italy

School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore

Funding

Ministry of Science and Technology of the People's Republic of China · National Key Research and Development Program of China · Ningbo Municipal Bureau of Science and Technology · K. C. Wong Magna Fund in Ningbo University · National Natural Science Foundation of China · Regione Campania · Natural Science Foundation of Zhejiang Province · Anhui Initiative in Quantum Information Technologies · Fundamental Research Funds for the Provincial Universities of Zhejiang

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