High-Wettability Poly(dimethylsiloxane) Substrate for Ultrastable Conductive Three-Dimensional Woven Ag Nanowire Grids
Source abstract
Abstract
Three-dimensional (3D) woven Ag nanowire (AgNW) grids have great potential for enhancing the mechanical stabilities, conductivity, and transmittance of flexible transparent electrodes (FTEs). However, it is a great challenge to control the formation of 3D woven AgNW grids on various substrates, especially the poly(dimethylsiloxane) (PDMS) substrate. This work presents a microtransfer-printing method for preparing a high-wettability poly(dimethylsiloxane) (PDMS) substrate to control the formation of 3D woven AgNW grids. The as-prepared PDMS substrate shows a high wettability performance. The surface structures of the PDMS substrate can control the sharp shrinkage of the ink membrane to give rise to a uniform liquid membrane evaporation behavior, which is the key factor for preparing a uniform 3D woven nanowire network. A thin uniform 3D woven AgNW network with a low sheet resistance of 24.3 Ω/□ and high transmittance of 92% was coated on the PDMS substrate. The networks directly coated the surface of the replicated PDMS, which simplified the peeling process and protected the networks from peeling strain and mechanical deformations. Moreover, the increment of resistance retained a small value (∼5%) when bending cycles reached 9,000. An alternating current electroluminescent (ACEL) device was prepared, and the uniform electroluminescence implies that a defect-free electrode has been fabricated. These results indicate that the as-prepared FTEs have excellent mechanical performance and great potential for flexible optoelectronic applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Sensor and Energy Harvesting Materials · Nanomaterials and Printing Technologies · Advanced Materials and Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Microelectronics, Southern University of Science and Technology, Shenzhen518055, China
Engineering Research Center of Integrated Circuits for Next-Generation Communications, Ministry of Education, Southern University of Science and Technology, Shenzhen518055, China
References (51)
Show source-provided references
1. 10.1021/acsnano.0c0648010.1021/acsnano.0c06480 ↗
2. 10.1021/acsami.7b1229810.1021/acsami.7b12298 ↗
3. 10.1364/optica.4.00128510.1364/optica.4.001285 ↗
4. 10.1002/admt.20210154010.1002/admt.202101540 ↗
5. 10.1039/c5ra01657f10.1039/c5ra01657f ↗
6. 10.1021/acsami.9b2175510.1021/acsami.9b21755 ↗
7. 10.1016/j.mtphys.2020.10019110.1016/j.mtphys.2020.100191 ↗
8. 10.1002/adem.20200131010.1002/adem.202001310 ↗
9. 10.1002/admt.20200004210.1002/admt.202000042 ↗
10. 10.1021/acsami.7b1434210.1021/acsami.7b14342 ↗
11. 10.1002/admi.20190089810.1002/admi.201900898 ↗
12. 10.1021/acs.nanolett.6b0461310.1021/acs.nanolett.6b04613 ↗
13. 10.1021/acsami.5b0654010.1021/acsami.5b06540 ↗
14. 10.1002/adma.20130237710.1002/adma.201302377 ↗
15. 10.1038/s41598-017-11964-w10.1038/s41598-017-11964-w ↗
16. 10.1021/acsami.6b0050010.1021/acsami.6b00500 ↗
17. 10.1038/am.2017.17710.1038/am.2017.177 ↗
18. 10.1038/nmat323810.1038/nmat3238 ↗
19. 10.1039/d0tc05783e10.1039/d0tc05783e ↗
20. 10.1038/s41565-018-0226-810.1038/s41565-018-0226-8 ↗
21. 10.1021/acsmaterialslett.1c0012810.1021/acsmaterialslett.1c00128 ↗
22. 10.1038/s41528-020-0074-010.1038/s41528-020-0074-0 ↗
23. 10.1016/j.mseb.2017.11.01410.1016/j.mseb.2017.11.014 ↗
24. 10.1002/admt.20190039810.1002/admt.201900398 ↗
25. 10.1021/acsami.7b1917310.1021/acsami.7b19173 ↗
26. 10.1021/acs.jpcc.7b0014810.1021/acs.jpcc.7b00148 ↗
27. 10.1002/adfm.20201015510.1002/adfm.202010155 ↗
28. 10.1002/adfm.20200612010.1002/adfm.202006120 ↗
29. 10.1039/c5tc00380f10.1039/c5tc00380f ↗
30. 10.1021/acsami.6b0590910.1021/acsami.6b05909 ↗
31. 10.1021/acsami.5b1130710.1021/acsami.5b11307 ↗
32. 10.1021/acsomega.8b0132010.1021/acsomega.8b01320 ↗
33. 10.1039/c5tc00740b10.1039/c5tc00740b ↗
34. 10.1016/j.mtphys.2021.10044210.1016/j.mtphys.2021.100442 ↗
35. 10.3390/mi610143710.3390/mi6101437 ↗
36. 10.1007/s13367-013-0018-510.1007/s13367-013-0018-5 ↗
37. 10.1098/rstl.1805.000510.1098/rstl.1805.0005 ↗
38. 10.1002/adma.20150403110.1002/adma.201504031 ↗
39. 10.1002/adma.20130295010.1002/adma.201302950 ↗
40. 10.1002/adma.20160035810.1002/adma.201600358 ↗
41. 10.1002/adma.20180280310.1002/adma.201802803 ↗
42. 10.1021/acsnano.8b0424510.1021/acsnano.8b04245 ↗
43. 10.1002/adma.20150404510.1002/adma.201504045 ↗
44. 10.1002/adma.20130106910.1002/adma.201301069 ↗
45. 10.1021/nn203576v10.1021/nn203576v ↗
46. 10.1021/jacs.7b0322710.1021/jacs.7b03227 ↗
47. 10.1002/adfm.20120380210.1002/adfm.201203802 ↗
48. 10.1002/adma.20200777210.1002/adma.202007772 ↗
49. 10.1126/science.aac508210.1126/science.aac5082 ↗
50. 10.1002/adma.20150418710.1002/adma.201504187 ↗
51. 10.1039/c8tc04690e10.1039/c8tc04690e ↗