DataVXACS Applied Materials & InterfacesPaper
journal article·2021-03-31Open access

Determination of Hafnium Zirconium Oxide Interfacial Band Alignments Using Internal Photoemission Spectroscopy and X-ray Photoelectron Spectroscopy

Melanie A. Jenkins, Konner E. K. Holden, Sean W. Smith, Michael T. Brumbach, M. David Henry, Conan Weiland, Joseph C. Woicik, Samantha T. Jaszewski, Jon F. Ihlefeld, John F. Conley

ACS Applied Materials & Interfaces· Volume 13· Issue 12
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Source abstract

Abstract

Doped ferroelectric HfO2 is highly promising for integration into complementary metal-oxide semiconductor (CMOS) technology for devices such as ferroelectric nonvolatile memory and low-power field-effect transistors (FETs). We report the direct measurement of the energy barriers between various metal electrodes (Pt, Au, Ta, TaN, Ti/Pt, Ni, Al) and hafnium zirconium oxide (Hf0.58Zr0.42O2, HZO) using internal photoemission (IPE) spectroscopy. Results are compared with valence band offsets determined using the three-sample X-ray photoelectron spectroscopy (XPS) as well as the two-sample hard X-ray photoelectron spectroscopy (HAXPES) techniques. Both XPS and IPE indicate roughly the same dependence of the HZO barrier on metal work function with a slope of 0.8 ± 0.5. XPS and HAXPES-derived barrier heights are on average about 1.1 eV smaller than barrier heights determined by IPE, suggesting the presence of negative charge in the HZO.
Source: openalex_inverted_index · Quality: baseline

Research context

Electronic materials

OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Semiconductor materials and devices · Electronic and Structural Properties of Oxides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, Oregon 97330, United States

Sandia National Laboratories, Albuquerque, New Mexico 87185, United States

Materials Measurement Science Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States

Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States

Charles L. Brown Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904, United States

Funding

Division of Chemistry · Oregon Nanoscience and Microtechnologies Institute · Division of Graduate Education · Sandia National Laboratories

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