journal article·2019-10-09

New Sb2Te3–xSex Monolayers with High Electron Mobilities and Wide Absorption Range

Ying Chen, Yu Wu, Ke Xu, Congcong Ma, Zixuan Lu, Xintong Zhang, Hao Zhang, Heyuan Zhu, Zhilai Fang

ACS Applied Materials & Interfaces· Volume 11· Issue 40
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Abstract

As a traditional thermoelectric material with high thermoelectric performance at room temperature, antimony telluride (Sb2Te3) has been widely used in energy applications like power generation and refrigeration. By employing the “atomic transmutation” method, three new kinds of Sb2Te3-based monolayers of α-Sb2Te2Se, α-Sb2TeSe2, and β-Sb2TeSe2 are designed, which are expected to possess a high thermoelectric performance due to the quantum-confinement effects. In this work, by using the ab initio calculations, we systematically study electronic structures, vibration modes, optical, transport, and thermoelectric properties for the three kinds of monolayers and find that they are indirect-band-gap semiconductor materials with chemical and thermodynamic stability up to 700 K (α-Sb2TeSe2) or 900 K (α-Sb2Te2Se and β-Sb2TeSe2). The band gaps are around 1.0 eV with five nearly degenerate peaks in valence bands. The three Sb2Te3–xSex monolayers possess high electron mobilities larger than 1000 cm2/(V s), and the maximum zT values of α-Sb2Te2Se/α-Sb2TeSe2/β-Sb2TeSe2 are 0.70/0.71/0.65 at 300 K, respectively. For optical properties, the three Sb2Te3–xSex monolayers possess a wide absorption range from the blue region to the ultraviolet region. Compared with Sb2Te3, the three new kinds of monolayers possess a wider range of absorptions, higher mobilities, and thermoelectric performances, which may lead to promising applications in thermoelectric devices and saturable absorbers.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Heusler alloys: electronic and magnetic properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Academy for Engineering and Technology, Fudan University, and Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Shanghai 200433, China

Key Laboratory of Micro and Nano Photonic Structures (MOE) and Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China

Nanjing University, National Laboratory of Solid State Microstructure, Nanjing 210093, China

Funding

Natural Science Foundation of Shanghai · National Natural Science Foundation of China

References (58)

Show source-provided references
1. 10.1002/anie.20150838110.1002/anie.201508381 ↗
2. 10.1039/C7EE02677C10.1039/C7EE02677C ↗
3. 10.1002/adfm.20180655810.1002/adfm.201806558 ↗
4. 10.1016/j.mattod.2017.02.00710.1016/j.mattod.2017.02.007 ↗
5. 10.1103/PhysRevB.47.1272710.1103/PhysRevB.47.12727 ↗
6. 10.1103/PhysRevB.83.23521110.1103/PhysRevB.83.235211 ↗
7. 10.1002/adma.20120291910.1002/adma.201202919 ↗
8. 10.1002/adma.20060052710.1002/adma.200600527 ↗
9. 10.1038/s41524-019-0197-910.1038/s41524-019-0197-9 ↗
10. Rowe D. · 2006
11. 10.1103/PhysRevB.96.06411610.1103/PhysRevB.96.064116 ↗
12. 10.1103/PhysRevB.81.15521110.1103/PhysRevB.81.155211 ↗
13. 10.1038/ncomms1030210.1038/ncomms10302 ↗
14. 10.1103/PhysRevB.86.08532310.1103/PhysRevB.86.085323 ↗
15. 10.3390/nano807047410.3390/nano8070474 ↗
16. 10.1002/adma.20170007010.1002/adma.201700070 ↗
17. 10.1039/C8CP06534A10.1039/C8CP06534A ↗
18. 10.1155/2019/695491810.1155/2019/6954918 ↗
19. 10.1103/PhysRevB.86.22430110.1103/PhysRevB.86.224301 ↗
20. 10.1088/1367-2630/12/6/06501310.1088/1367-2630/12/6/065013 ↗
21. 10.1103/PhysRevB.99.16513310.1103/PhysRevB.99.165133 ↗
22. 10.1016/j.nanoen.2017.11.04310.1016/j.nanoen.2017.11.043 ↗
23. 10.1103/PhysRevLett.112.22680110.1103/PhysRevLett.112.226801 ↗
24. 10.1021/acs.nanolett.5b0434110.1021/acs.nanolett.5b04341 ↗
25. 10.1002/adts.20180018410.1002/adts.201800184 ↗
26. 10.1016/j.cpc.2006.03.00710.1016/j.cpc.2006.03.007 ↗
27. 10.1103/PhysRevB.54.1116910.1103/PhysRevB.54.11169 ↗
28. 10.1103/PhysRevLett.77.386510.1103/PhysRevLett.77.3865 ↗
29. 10.1063/1.220459710.1063/1.2204597 ↗
30. 10.1063/1.44733410.1063/1.447334 ↗
31. 10.1002/adts.20170000510.1002/adts.201700005 ↗
32. 10.1103/PhysRevB.73.04511210.1103/PhysRevB.73.045112 ↗
33. 10.1103/PhysRevB.62.882810.1103/PhysRevB.62.8828 ↗
34. 10.1039/C5TC01622C10.1039/C5TC01622C ↗
35. 10.1002/andp.20160015210.1002/andp.201600152 ↗
36. 10.1016/j.cpc.2014.05.00310.1016/j.cpc.2014.05.003 ↗
37. 10.1103/PhysRev.80.7210.1103/PhysRev.80.72 ↗
38. 10.1021/nn102472s10.1021/nn102472s ↗
39. 10.1021/jz400558710.1021/jz4005587 ↗
40. 10.1186/s11671-015-0955-710.1186/s11671-015-0955-7 ↗
41. 10.1103/PhysRevB.96.24542110.1103/PhysRevB.96.245421 ↗
42. 10.1039/C7TA09480A10.1039/C7TA09480A ↗
43. 10.1038/s41565-017-0035-510.1038/s41565-017-0035-5 ↗
44. Mahalakshmi, K.; Sankar, S.; Sathyakumari, V. S.; Subhashree, G.; Krithiga, R. In Band gap and Debye temperature of the alloys of SbTeSe: An ab-initio study, 2014 International Conference on Science Engineering and Management Research (ICSEMR), New York, Nov 27–29, 2014; Chennai, India, 2014.10.1109/ICSEMR.2014.7043650 ↗
45. 10.1021/j100135a01410.1021/j100135a014 ↗
46. Dresselhaus M. · 2008
47. 10.1016/j.rinp.2017.06.04010.1016/j.rinp.2017.06.040 ↗
48. Yu P. Y. · 2010
49. 10.1088/0034-4885/51/4/00110.1088/0034-4885/51/4/001 ↗
50. 10.1039/C8TC03618G10.1039/C8TC03618G ↗
51. 10.1021/nl503140c10.1021/nl503140c ↗
52. 10.1021/acs.jpclett.7b0303610.1021/acs.jpclett.7b03036 ↗
53. 10.1021/acs.chemmater.6b0490910.1021/acs.chemmater.6b04909 ↗
54. 10.1021/cm903829710.1021/cm9038297 ↗
55. 10.1063/1.505147010.1063/1.5051470 ↗
56. 10.1016/j.cpc.2017.06.02310.1016/j.cpc.2017.06.023 ↗
57. 10.1088/0957-4484/24/49/49540210.1088/0957-4484/24/49/495402 ↗
58. 10.1103/PhysRevB.47.1272710.1103/PhysRevB.47.12727 ↗