journal article·2022-08-17

Local Epitaxial Templating Effects in Ferroelectric and Antiferroelectric ZrO2

Kisung Chae, Sarah F. Lombardo, Nujhat Tasneem, Mengkun Tian, Harish Kumarasubramanian, Jae Hur, Winston Chern, Shimeng Yu, Claudia Richter, Patrick D. Lomenzo, Michael Hoffmann, Uwe Schroeder, Dina Triyoso, Steven Consiglio, Kanda Tapily, Robert Clark, Gert Leusink, Nazanin Bassiri-Gharb, Prab Bandaru, Jayakanth Ravichandran, Andrew Kummel, Kyeongjae Cho, Josh Kacher, Asif Islam Khan

ACS Applied Materials & Interfaces· Volume 14· Issue 32
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Abstract

Nanoscale polycrystalline thin-film heterostructures are central to microelectronics, for example, metals used as interconnects and high-K oxides used in dynamic random-access memories (DRAMs). The polycrystalline microstructure and overall functional response therein are often dominated by the underlying substrate or layer, which, however, is poorly understood due to the difficulty of characterizing microstructural correlations at a statistically meaningful scale. Here, an automated, high-throughput method, based on the nanobeam electron diffraction technique, is introduced to investigate orientational relations and correlations between crystallinity of materials in polycrystalline heterostructures over a length scale of microns, containing several hundred individual grains. This technique is employed to perform an atomic-scale investigation of the prevalent near-coincident site epitaxy in nanocrystalline ZrO2 heterostructures, the workhorse system in DRAM technology. The power of this analysis is demonstrated by answering a puzzling question: why does polycrystalline ZrO2 transform dramatically from being antiferroelectric on polycrystalline TiN/Si to ferroelectric on amorphous SiO2/Si?
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Research context

OpenAlex topics: Ferroelectric and Negative Capacitance Devices · Ferroelectric and Piezoelectric Materials · Electronic and Structural Properties of Oxides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093, United States

Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States

School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States

School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States

Institute of Electronics and Nanotechnology, Georgia Institute of Technology, Atlanta, Georgia 30318, United States

Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089, United States

Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States

Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02142, United States

NaMLab gGmbH/TU Dresden, Noethnitzer Str. 64 a, Dresden D-01187, Germany

TEL Technology Center, America, LLC, Albany, New York 12203, United States

G.W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States

Department of Mechanical & Aerospace Engineering, University of California, La Jolla, San Diego, California 92093, United States

Funding

Defense Advanced Research Projects Agency · Intelligence Advanced Research Projects Activity · Semiconductor Research Corporation · Saxon State Parliament

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