Free-Standing Atomically Thin ZnO Layers via Oxidation of Zinc Chalcogenide Nanosheets
Source abstract
Abstract
Monolayer ZnO represents a class of new two-dimensional (2D) materials that are expected to exhibit unique optoelectronic properties and applications. Here we report a novel strategy to synthesize free-standing atomically thin ZnO layers via the oxidation of hydrothermally grown ultrathin zinc chalcogenide nanosheets. With micrometer-scaled lateral size, the obtained ultrathin ZnO layer has a thickness of ∼2 nm, and the layered structure still maintained well after high temperature oxidation. The thermal treatment strongly improves the crystal quality as well without inducing cracks or pinholes in the ultrathin layers. The atomically thin ZnO layers are highly luminescent with dominant green emission. High quality white light is obtained from the mixed phosphors containing the ZnO layers, exhibiting their potential as compelling ultraviolet-excited phosphors.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Perovskite Materials and Applications · 2D Materials and Applications · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
Funding
Ministry of Education of the People's Republic of China · National Natural Science Foundation of China
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