journal article·2023-06-14

Undoped Strained Ge Quantum Well with Ultrahigh Mobility of Two Million

Zhenzhen Kong, Zonghu Li, Gang Cao, Jiale Su, Yiwen Zhang, Jinbiao Liu, Jingxiong Liu, Yuhui Ren, Huihui Li, Laiming Wei, Guo-ping Guo, Yuanyuan Wu, Henry H. Radamson, Junfeng Li, Zhenhua Wu, Hai-ou Li, Jiecheng Yang, Chao Zhao, Tianchun Ye, Guilei Wang

ACS Applied Materials & Interfaces· Volume 15· Issue 23
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Abstract

We develop a method to fabricate an undoped Ge quantum well (QW) under a 32 nm relaxed Si 0.2 Ge 0.8 shallow barrier. The bottom barrier contains Si 0.2 Ge 0.8 (650 °C) and Si 0.1 Ge 0.9 (800 °C) such that variation of Ge content forms a sharp interface that can suppress the threading dislocation density (TDD) penetrating into the undoped Ge quantum well. The SiGe barrier introduces enough in-plane parallel strain (ε ∥ strain −0.41%) in the Ge quantum well. The heterostructure field-effect transistors with a shallow buried channel obtain an ultrahigh two-dimensional hole gas (2DHG) mobility over 2 × 10 6 cm 2 /(V s) and a very low percolation density of (5.689 ± 0.062) × 10 10 cm –2 . The fractional indication is also observed at high density and high magnetic fields. This strained germanium as a noise mitigation material provides a platform for integration of quantum computation with a long coherence time and fast all-electrical manipulation.
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Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices · Quantum and electron transport phenomena · Advancements in Semiconductor Devices and Circuit Design

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Integrated Circuit Advanced Process R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, P. R. China

School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 100049, P. R. China

CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, P. R. China

Hefei National Laboratory, Hefei 230088, P. R. China

Origin Quantum Computing Company Limited, Hefei 230026, P. R. China

Beijing Superstring Academy of Memory Technology, Beijing 100176, P. R. China

School of Advanced Manufacturing Engineering, Hefei University, Hefei 230601, P. R. China

Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, P. R. China

Funding

National Key Research and Development Program of China · Youth Innovation Promotion Association · National Natural Science Foundation of China · Innovation Program for Quantum Science and Technology

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