Characterizing and Improving the Thermal Stability of Organic Photovoltaics Based on Halogen-Rich Non-Fullerene Acceptors

The thermal stability of inverted, halogen-rich non-fullerene acceptor (NFA)-based organic photovoltaics with MoOx as the hole transporting layer is studied at temperatures up to 80 °C. Over time, the power conversion efficiency shows a “check-mark” shaped thermal aging pattern, featuring an early decrease, followed by a long-term recovery. A high Cl concentration at the bulk heterojunction (BHJ)/MoOx interface in the thermally aged device is found using energy dispersive X-ray spectroscopy. X-ray photoelectron spectroscopy shows that the MoOx is chlorinated after thermal aging. With bulk quantum efficiency analysis, we propose an explanation to the check-mark shaped pattern. Inserting a thin C70 layer between the BHJ and MoOx suppresses the thermal degradation mechanisms, resulting in three orders of magnitude increase in device lifetime at 80 °C.