Magneto-Ionics in Single-Layer Transition Metal Nitrides
Source abstract
Abstract
Magneto-ionics allows for tunable control of magnetism by voltage-driven transport of ions, traditionally oxygen or lithium and, more recently, hydrogen, fluorine, or nitrogen. Here, magneto-ionic effects in single-layer iron nitride films are demonstrated, and their performance is evaluated at room temperature and compared with previously studied cobalt nitrides. Iron nitrides require increased activation energy and, under high bias, exhibit more modest rates of magneto-ionic motion than cobalt nitrides. Ab initio calculations reveal that, based on the atomic bonding strength, the critical field required to induce nitrogen-ion motion is higher in iron nitrides (≈6.6 V nm-1) than in cobalt nitrides (≈5.3 V nm-1). Nonetheless, under large bias (i.e., well above the magneto-ionic onset and, thus, when magneto-ionics is fully activated), iron nitride films exhibit enhanced coercivity and larger generated saturation magnetization, surpassing many of the features of cobalt nitrides. The microstructural effects responsible for these enhanced magneto-ionic effects are discussed. These results open up the potential integration of magneto-ionics in existing nitride semiconductor materials in view of advanced memory system architectures.
Source: europepmc · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and devices · ZnO doping and properties · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Departament de Física, Universitat Autònoma de Barcelona, Cerdanyola del Vallès E-08193, Spain
IMN-Instituto de Micro y Nanotecnología (CNM-CSIC), Isaac Newton 8, PTM, Tres Cantos, Madrid 28760, Spain
Univwesity of Grenoble Alpes, CEA, CNRS, Spintec, Grenoble 38000, France
Institut Universitaire de France, Paris 75231, France
Department of Physics, Georgetown University, Washington, District of Columbia 20057, United States
Catalan Institute of Nanoscience and Nanotechnology (ICN2), Campus UAB, Bellaterra, Barcelona E-08193, Spain
Institute of Radiation Physics, Helmholtz-Zentrum Dresden−Rossendorf, Dresden 01328, Germany
Institut de Microelectrònica de Barcelona, IMB-CNM (CSIC), Campus UAB, Bellaterra, Barcelona E-08193, Spain
Institució Catalana de Recerca i Estudis Avançats (ICREA), Pg. Lluís Companys 23, Barcelona E-08010, Spain
Funding
Agence Nationale de la Recherche · Departament d'Innovació, Universitats i Empresa, Generalitat de Catalunya · SecretarÃa de Estado de Investigación, Desarrollo e Innovación · H2020 European Research Council · Helmholtz Association
References (77)
Show source-provided references
1. 10.1063/1.511208910.1063/1.5112089 ↗
2. 10.1016/j.pmatsci.2017.02.00210.1016/j.pmatsci.2017.02.002 ↗
3. 10.1002/aelm.20190097410.1002/aelm.201900974 ↗
4. 10.1103/PhysRevMaterials.3.06440810.1103/PhysRevMaterials.3.064408 ↗
5. 10.1002/adfm.20200370410.1002/adfm.202003704 ↗
6. 10.1002/adfm.20160341110.1002/adfm.201603411 ↗
7. 10.1002/adma.20130593210.1002/adma.201305932 ↗
8. 10.1038/nmat413410.1038/nmat4134 ↗
9. 10.1063/1.497347510.1063/1.4973475 ↗
10. 10.1021/acsami.8b1744210.1021/acsami.8b17442 ↗
11. 10.1038/s41563-018-0211-510.1038/s41563-018-0211-5 ↗
12. 10.1021/acsnano.8b0540710.1021/acsnano.8b05407 ↗
13. 10.1002/adma.20180666210.1002/adma.201806662 ↗
14. 10.1103/PhysRevB.98.21444110.1103/PhysRevB.98.214441 ↗
15. 10.1002/smll.20190452310.1002/smll.201904523 ↗
16. 10.1038/ncomms1105010.1038/ncomms11050 ↗
17. 10.1038/ncomms1226410.1038/ncomms12264 ↗
18. 10.1016/j.elecom.2016.09.01810.1016/j.elecom.2016.09.018 ↗
19. 10.1126/science.106538910.1126/science.1065389 ↗
20. 10.1038/nature0502310.1038/nature05023 ↗
21. 10.1039/C8TC01994K10.1039/C8TC01994K ↗
22. 10.1103/PhysRevLett.113.26720210.1103/PhysRevLett.113.267202 ↗
23. 10.1002/admi.20200114310.1002/admi.202001143 ↗
24. 10.1038/s41467-020-19758-x10.1038/s41467-020-19758-x ↗
25. 10.1103/PhysRevB.48.1168510.1103/PhysRevB.48.11685 ↗
26. 10.3133/b213110.3133/b2131 ↗
27. 10.1021/acs.inorgchem.6b0105610.1021/acs.inorgchem.6b01056 ↗
28. Chase M. · 1998
29. 10.1016/S1293-2558(00)00151-510.1016/S1293-2558(00)00151-5 ↗
30. 10.1016/S0304-8853(99)00429-110.1016/S0304-8853(99)00429-1 ↗
31. 10.1103/PhysRevLett.87.07550310.1103/PhysRevLett.87.075503 ↗
32. 10.1007/BF0286927310.1007/BF02869273 ↗
33. 10.1098/rspa.1948.010010.1098/rspa.1948.0100 ↗
34. Jack K. H. · Proc. R. Soc. London, Ser. A. Math. Phys. Sci. · 1951 · 208 · 216
35. 10.1107/S0365110X5200125810.1107/S0365110X52001258 ↗
36. 10.1107/S0365110X5000107510.1107/S0365110X50001075 ↗
37. 10.1007/s11041-010-9301-y10.1007/s11041-010-9301-y ↗
38. 10.1002/adma.20110399110.1002/adma.201103991 ↗
39. 10.1063/1.486906510.1063/1.4869065 ↗
40. 10.1039/c2cc30213f10.1039/c2cc30213f ↗
41. 10.1016/j.jmmm.2004.08.01610.1016/j.jmmm.2004.08.016 ↗
42. 10.1103/PhysRevB.102.10440210.1103/PhysRevB.102.104402 ↗
43. 10.1016/j.wear.2007.10.01410.1016/j.wear.2007.10.014 ↗
44. 10.1016/S0304-8853(98)00312-610.1016/S0304-8853(98)00312-6 ↗
45. 10.1063/1.367153210.1063/1.3671532 ↗
46. 10.1016/j.jmmm.2013.11.00210.1016/j.jmmm.2013.11.002 ↗
47. 10.1109/20.5049010.1109/20.50490 ↗
48. Rumble J. R. · 2016
49. 10.1063/1.481232310.1063/1.4812323 ↗
50. 10.1002/zaac.1969366050410.1002/zaac.19693660504 ↗
51. 10.1107/S002188989000238210.1107/S0021889890002382 ↗
52. 10.1063/1.504021510.1063/1.5040215 ↗
53. 10.1088/1742-6596/443/1/01200310.1088/1742-6596/443/1/012003 ↗
54. 10.1103/RevModPhys.85.158310.1103/RevModPhys.85.1583 ↗
55. 10.1002/pssc.20067586810.1002/pssc.200675868 ↗
56. 10.1063/1.491901410.1063/1.4919014 ↗
57. Krause-Rehberg, R.; Leipner, H. S. Positron Annihilation in Semiconductors; Springer Series in Solid-State Sciences; Springer: Berlin Heidelberg, 1999; Vol. 127, p 383.10.1007/978-3-662-03893-2_4 ↗
58. 10.1126/science.113662910.1126/science.1136629 ↗
59. 10.1021/acsami.9b1348310.1021/acsami.9b13483 ↗
60. 10.1038/s41598-019-46618-610.1038/s41598-019-46618-6 ↗
61. 10.1063/1.508028410.1063/1.5080284 ↗
62. 10.1038/s41563-018-0246-710.1038/s41563-018-0246-7 ↗
63. 10.1016/j.jallcom.2012.01.10010.1016/j.jallcom.2012.01.100 ↗
64. 10.1155/1993/6368710.1155/1993/63687 ↗
65. 10.1021/cm960077f10.1021/cm960077f ↗
66. 10.1016/0022-1902(61)80142-510.1016/0022-1902(61)80142-5 ↗
67. 10.1021/ja992867710.1021/ja9928677 ↗
68. 10.1088/0953-8984/26/2/02540410.1088/0953-8984/26/2/025404 ↗
69. 10.1002/adfm.20170190410.1002/adfm.201701904 ↗
70. 10.1103/PhysRevB.50.1795310.1103/PhysRevB.50.17953 ↗
71. 10.1103/PhysRevB.54.1116910.1103/PhysRevB.54.11169 ↗
72. 10.1016/0927-0256(96)00008-010.1016/0927-0256(96)00008-0 ↗
73. 10.1103/PhysRevB.48.1311510.1103/PhysRevB.48.13115 ↗
74. 10.1103/PhysRevLett.77.386510.1103/PhysRevLett.77.3865 ↗
75. 10.1103/PhysRevB.61.787710.1103/PhysRevB.61.7877 ↗
76. 10.1063/1.132322410.1063/1.1323224 ↗
77. 10.1063/1.132967210.1063/1.1329672 ↗